NTMFD5C674NL datasheet(1/7 Pages) ONSEMI

номер детали	NTMFD5C674NL

подробное описание детали	MOSFET ??Dual, N-Channel 60 V, 14.4 m, 42 A

Download	7 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

Logo

1 / 7 page

May, 2019 − Rev. P3

1

Publication Order Number:

NTMFD5C674NL/D

NTMFD5C674NL

MOSFET – Dual, N-Channel

60 V, 14.4 mW, 42 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJC

(Notes 1, 2, 3)

Steady

State

TC = 25°C

ID

42

A

TC = 100°C

26

Power Dissipation

RqJC (Notes 1, 2)

TC = 25°C

PD

37

W

TC = 100°C

18

Continuous Drain

Current RqJA

(Notes 1, 2, 3)

Steady

State

TA = 25°C

ID

11

A

TA = 100°C

7.5

Power Dissipation

RqJA (Notes 1 & 2)

TA = 25°C

PD

3.0

W

TA = 100°C

1.5

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

119

A

Operating Junction and Storage Temperature

TJ, Tstg

−55 to

+ 175

°C

Source Current (Body Diode)

IS

44

A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 1.6 A)

EAS

61

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

RqJC

2.86

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

49

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

MARKING

DIAGRAM

www.onsemi.com

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

V(BR)DSS

RDS(ON) MAX

ID MAX

60 V

14.4 mW @ 10 V

42 A

20.4 mW @ 4.5 V

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

ORDERING INFORMATION

D1

D2

S1

G1

S2

G2

Dual N−Channel

D1

S1

G1

XXXXXX

AYWZZ

D2

D1

D2

S2

G2

D2

D1

DFN8 5x6

(SO8FL)

CASE 506BT

1

Аналогичный номер детали - NTMFD5C674NL

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	NTMFD5C672NL	230Kb / 7P	MOSFET ??Power, Dual, N-Channel 60 V, 11.9 m, 49 A May, 2019 ??Rev. 0
ON Semiconductor	NTMFD5C672NLT1G	230Kb / 7P	MOSFET ??Power, Dual, N-Channel 60 V, 11.9 m, 49 A May, 2019 ??Rev. 0

More results

NTMFD5C674NL датащи(PDF) 1 Page - ON Semiconductor

NTMFD5C674NL датащи(HTML) 1 Page - ON Semiconductor

Аналогичный номер детали - NTMFD5C674NL

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL