поискавой системы для электроныых деталей |
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NTMFD5C674NL датащи(PDF) 4 Page - ON Semiconductor |
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NTMFD5C674NL датащи(HTML) 4 Page - ON Semiconductor |
4 / 7 page NTMFD5C674NL www.onsemi.com 4 TYPICAL CHARACTERISTICS 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10 100 1000 1 10 100 1 10 100 1,000 0 5 15 20 25 35 40 Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) VGS = 0 V TJ = 25°C f = 1 MHz CISS COSS CRSS VDS = 48 V TJ = 25°C ID = 20 A QGS QGD VGS = 4.5 V VDS = 48 V ID = 20 A td(off) td(on) tf tr TJ = 125°C TJ = 25°C TJ = −55°C RDS(on) Limit Thermal Limit Package Limit 1 ms 10 ms TC = 25°C VGS ≤ 10 V Single Pulse 10 ms 0.5 ms VGS = 0 V TJ (initial) = 100°C TJ (initial) = 25°C 0 1 2 3 4 5 6 7 8 9 10 0123456789 10 30 10 |
Аналогичный номер детали - NTMFD5C674NL |
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