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32G474 датащи(PDF) 169 Page - STMicroelectronics |
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32G474 датащи(HTML) 169 Page - STMicroelectronics |
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169 / 236 page ![]() DS12288 Rev 4 169/236 STM32G474xB STM32G474xC STM32G474xE Electrical characteristics 201 Figure 34. OPAMP noise density @ 25°C 1. Guaranteed by design, unless otherwise specified. 2. Data guaranteed on normal and high speed mode unless otherwise specified. 3. Guaranteed by characterization results. 4. Valid also for inverting gain configuration with external bias. 5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 MSv62525V1 |
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