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EDB8164B4PR-1DITF-R датащи(PDF) 118 Page - Micron Technology |
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EDB8164B4PR-1DITF-R датащи(HTML) 118 Page - Micron Technology |
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118 / 152 page ![]() Figure 76: Single-Ended Output Slew Rate Definition V OH(AC) V REF V OL(AC) Time ΔTF SE ΔTR SE Table 79: Single-Ended Output Slew Rate Notes 1–5 apply to all parameters conditions Parameter Symbol Value Unit Min Max Single-ended output slew rate (output impedance = 40 Ω SRQSE 1.5 3.5 V/ns Single-ended output slew rate (output impedance = 60 Ω SRQSE 1.0 2.5 V/ns Output slew-rate-matching ratio (pull-up to pull-down) 0.7 1.4 – Notes: 1. Definitions: SR = slew rate; Q = output (similar to DQ = data-in, data-out); SE = single- ended signals. 2. Measured with output reference load. 3. The ratio of pull-up to pull-down slew rate is specified for the same temperature and voltage over the entire temperature and voltage range. For a given output, the ratio represents the maximum difference between pull-up and pull-down drivers due to proc- ess variation. 4. The output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC). 5. Slew rates are measured under typical simultaneous switching output (SSO) conditions, with one-half of DQ signals per data byte driving HIGH and one-half of DQ signals per data byte driving LOW. Differential Output Slew Rate With the reference load for timing measurements, the output slew rate for falling and rising edges is defined and measured between VOL,diff(AC) and VOH,diff(AC) for differential signals. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Output Characteristics and Operating Conditions 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 118 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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