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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32MP157C датащи(PDF) 163 Page - STMicroelectronics |
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STM32MP157C датащи(HTML) 163 Page - STMicroelectronics |
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163 / 260 page  DS12505 Rev 5 163/260 STM32MP157C/F Electrical characteristics 238 DDR characteristics DDR3, DDR3L I/O DC specifications The following table provides input and output DC threshold values and on-die-termination (ODT) recommended values. The conditions for the output threshold values are un- terminated outputs loaded with 1 pF capacitor load. The ODT values are measured after impedance calibration. LPDDR2, LPDDR3 I/O DC specifications The following table provides input and output DC threshold values. The conditions for the output threshold values are un-terminated outputs loaded with 1 pF capacitor load. IVDD OTP consumption on VDD Programming - 10000 µA Reading - 2200 µA PowerDown - 1 µA FOTP (1) OTP operating Frequency - - 67 MHz NB_CYCLE (2) Maximum number of reading cycles - - 500 Million 1. Guaranteed by design. 2. Guaranteed by characterization results. Table 44. OTP characteristics (continued) Symbol Parameter Conditions Min Max Unit Table 45. DC specifications – DDR3 or DDR3L mode(1) Symbol Parameter Min Typ Max Unit VIH(DC) DC input voltage high VREF + 0.09 - VDDQ V VIL(DC) DC input voltage low VSSQ - 0.3 - VREF - 0.09 V VOH DC output logic high 0.8 × VDDQ -- V VOL DC output logic low - - 0.2 × VDDQ V RTT Input termination resistance (ODT) to VDDQ/2 100 54 36 120 60 40 140 66 44 Ω ILS Input leakage current, SSTL mode, unterminated - 0.01 4.8 μA 1. Guaranteed by design. Table 46. DC specifications – LPDDR2 or LPDDR3 mode(1) Symbol Parameter Min Typ Max Unit VIH(DC) DC input voltage high VREF + 0.13 - VDDQ V VIL(DC) DC input voltage low VSSQ -VREF - 0.13 V VOH DC output logic high 0.9 × VDDQ -- V VOL DC output logic low - - 0.1 × VDDQ V ILEAK Input leakage current - 0.01 4.51 μA |
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