STM32MP157F datasheet(155/260 Pages) STMICROELECTRONICS

номер детали	STM32MP157F

подробное описание детали	Arm® dual Cortex®-A7 800 MHz Cortex®-M4 MPU, 3D GPU, TFT/DSI, 37 comm. interfaces, 29 timers, adv. analog, crypto

PDF	260 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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155 / 260 page

DS12505 Rev 5

155/260

STM32MP157C/F

Electrical characteristics

238

6.3.9

External clock source security characteristics

6.3.10

Internal clock source characteristics

The parameters given in Table 36, Table 37 and Table 38 are derived from tests performed

under ambient temperature and VDD supply voltage conditions summarized in Table 13:

General operating conditions.

64 MHz high-speed internal RC oscillator (HSI)

Table 35. High-speed external user clock security system (HSE CSS)(1)

1. Guaranteed by design.

Symbol

Parameter

Min

Typ

Max

Unit

tDCM(HSE_CSS)

Time to detect clock missing

μs

tDCP(HSE_CSS)

Time to detect clock presence

250

IVDD(HSE_CSS)

Power consumption (fHSE = 48 MHz)

μA

Table 36. HSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI(2)

HSI frequency

VDD = 3.3 V, TJ = 30 °C

63.7

64.3

MHz

TRIM

HSI user trimming step

Trimming is not a multiple

of 32

0.24

0.33

Trimming is 128, 256 and

384

-2.43

Trimming is 64, 192, 320

and 448

-0.70

Other trimming are a

multiple of 32 (not

including multiple of 64

and 128)

-0.30

DuCy(HSI)

Duty Cycle

ΔVDD (HSI)

HSI oscillator frequency drift over VDD

(reference is 3.3 V)

VDD = 1.71 to 3.6 V

-0.12

0.03

ΔTEMP (HSI)(3)

HSI oscillator frequency drift over

temperature after factory calibration

TJ = -20 to 110 °C

-1.25

0.75

TJ = -40 to 125 °C

-1.75

0.95

tsu(HSI)

HSI oscillator start-up time (Time

between Enable rising and First output

clock edge.)

1.47

µs

tstab(HSI)

HSI oscillator stabilization time

at 1% of target frequency

-3

µs

IDD(HSI)

HSI oscillator power consumption

300

400

µA

1. Guaranteed by design unless otherwise specified.

2. Guaranteed by test in production.

3. Guaranteed by characterization results.

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