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STM32H747AI датащи(PDF) 155 Page - STMicroelectronics

номер детали STM32H747AI
подробное описание детали  Dual 32-bit Arm® Cortex®-M7 up to 480MHz and -M4 MCUs, up to 2MB Flash, 1MB RAM, 46 com. and analog interfaces, SMPS, DSI
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STM32H747AI датащи(HTML) 155 Page - STMicroelectronics

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DS12930 Rev 1
145/242
STM32H747xI/G
Electrical characteristics
221
6.3.17
I/O current injection characteristics
As a general rule, a current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during the normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when an abnormal injection accidentally happens, susceptibility
tests are performed on a sample basis during the device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency
deviation).
The following tables are the compilation of the SIC1/SIC2 and functional ESD results.
Negative induced A negative induced leakage current is caused by negative injection and
positive induced leakage current by positive injection.
Table 70. I/O current injection susceptibility(1)
Symbol
Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
IINJ
PA7, PC5, PG1, PB14, PJ7, PA11, PA12, PA13, PA14, PA15,
PJ12, PB4
50
mA
PA2, PH2, PH3, PE8, PA6, PA7, PC4, PE7, PE10, PE11
0
NA
PA0, PA_C, PA1, PA1_C, PC2, PC2_C, PC3, PC3_C, PA4,
PA5, PH4, PH5, BOOT0
00
All other I/Os
5
NA
1. Guaranteed by characterization
.



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