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STM32H747AI датащи(PDF) 143 Page - STMicroelectronics |
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STM32H747AI датащи(HTML) 143 Page - STMicroelectronics |
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143 / 252 page ![]() DS12930 Rev 1 133/242 STM32H747xI/G Electrical characteristics 221 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 24. Typical application with a 32.768 kHz crystal 1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.10 Internal clock source characteristics The parameters given in Table 54 to Table 57 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 22: General operating conditions. 48 MHz high-speed internal RC oscillator (HSI48) ai17531b OSC32_OU T OSC32_IN fLSE CL1 RF STM32 32.768 kH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 54. HSI48 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI48 HSI48 frequency VDD=3.3 V, TJ=30 °C 47.5(1) 48 48.5(1) MHz TRIM(2) USER trimming step - - 0.175 - % USER TRIM COVERAGE(3) USER TRIMMING Coverage ± 32 steps ±4.79 ±5.60 - % DuCy(HSI48)(2) Duty Cycle - 45 - 55 % ACCHSI48_REL(3)(4) Accuracy of the HSI48 oscillator over temperature (factory calibrated) TJ=-40 to 125 °C –4.5 - 3.5 % ∆VDD(HSI48)(3) HSI48 oscillator frequency drift with VDD(5) VDD=3 to 3.6 V - 0.025 0.05 % VDD=1.62 V to 3.6 V - 0.05 0.1 tsu(HSI48)(2) HSI48 oscillator start-up time - - 2.1 4.0 µs IDD(HSI48)(2) HSI48 oscillator power consumption - - 350 400 µA NT jitter Next transition jitter Accumulated jitter on 28 cycles(6) - - ± 0.15 - ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(6) - - ± 0.25 - ns 1. Guaranteed by test in production. 2. Guaranteed by design. 3. Guaranteed by characterization. 4. ∆fHSI = ACCHSI48_REL + ∆VDD. |
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