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STM32H747AI датащи(PDF) 117 Page - STMicroelectronics |
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STM32H747AI датащи(HTML) 117 Page - STMicroelectronics |
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117 / 252 page ![]() DS12930 Rev 1 107/242 STM32H747xI/G Electrical characteristics 221 6.3.6 Embedded reference voltage The parameters given in Table 29 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 22: General operating conditions. VAVM_0 Analog voltage detector for VDDA threshold 0 Rising edge 1.66 1.71 1.76 V Falling edge 1.56 1.61 1.66 VAVM_1 Analog voltage detector for VDDA threshold 1 Rising edge 2.06 2.12 2.19 Falling edge 1.96 2.02 2.08 VAVM_2 Analog voltage detector for VDDA threshold 2 Rising edge 2.42 2.50 2.58 Falling edge 2.35 2.42 2.49 VAVM_3 Analog voltage detector for VDDA threshold 3 Rising edge 2.74 2.83 2.91 Falling edge 2.64 2.72 2.80 Vhyst_VDDA Hysteresis of VDDA voltage detector - - 100 - mV IDD_PVM PVM consumption from VDD(1) -- - 0.25 µA IDD_VDDA Voltage detector consumption on VDDA(1) Resistor bridge - - 2.5 µA 1. Guaranteed by design. 2. BOR0 is enabled in all modes and its consumption is therefore included in the supply current characteristics tables (refer to Section 6.3.7: Supply current characteristics). Table 28. Reset and power control block characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 29. Embedded reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltages -40°C < TJ < 125 °C, VDD = 3.3 V 1.180 1.216 1.255 V tS_vrefint(1)(2) ADC sampling time when reading the internal reference voltage -4.3 - - µs tS_vbat(1)(2) VBAT sampling time when reading the internal VBAT reference voltage -9 - - Irefbuf(2) Reference Buffer consumption for ADC VDDA=3.3 V 9 13.5 23 µA ΔV REFINT (2) Internal reference voltage spread over the temperature range -40°C < TJ < 125 °C - 5 15 mV Tcoeff(2) Average temperature coefficient Average temperature coefficient -20 70 ppm/°C VDDcoeff(2) Average Voltage coefficient 3.0V < VDD < 3.6V - 10 1370 ppm/V |
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