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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32MP153C датащи(PDF) 206 Page - STMicroelectronics |
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STM32MP153C датащи(HTML) 206 Page - STMicroelectronics |
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206 / 254 page  Electrical characteristics STM32MP153C/F 206/254 DS12503 Rev 3 6.3.29 VDDCORE monitoring characteristics 6.3.30 Voltage booster for analog switch 6.3.31 Compensation cell 6.3.32 Digital filter for sigma-delta modulators (DFSDM) characteristics Unless otherwise specified, the parameters given in Table 90 for DFSDM are derived from tests performed under the ambient temperature, fpclkx frequency and VDD supply voltage summarized in Table 13: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 10 • Capacitive load C = 30 pF • Measurement points are done at CMOS levels: 0.5×VDD Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate function characteristics (DFSDMx_CKINx, DFSDMx_DATINx, DFSDMx_CKOUT for DFSDMx). Table 87. VDDCORE monitoring characteristics Symbol Parameter Min Typ Max Unit tS_vddcore(1) 1. Guaranteed by design. ADC sampling time when reading VDDCORE input 100 - - ns Table 88. Voltage booster for analog switch characteristics Symbol Parameter Condition Min Typ Max Unit VDD Supply voltage - 1.71 - 3.6 V tSU(BOOST) Booster startup time - - - 50 µs IDD(BOOST) Booster consumption 1.71 V ≤ VDD ≤ 2.7 V - - 125 µA 2.7 V < VDD < 3.6 V - - 250 Table 89. Compensation cell characteristics Symbol Parameter Condition Min Typ Max Unit ICOMPCELL VDD current consumption during code calculation 1.71 V ≤ VDD ≤ 2.7 V - - 3.5 mA 2.7 V < VDD < 3.6 V - - 10 TREADY Time needed for code calculation 1.71 V ≤ VDD ≤ 2.7 V - - 300 µs 2.7 V < VDD < 3.6 V - - 250 |
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