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STM32MP151C датащи(PDF) 204 Page - STMicroelectronics

номер детали STM32MP151C
подробное описание детали  Arm® Cortex®-A7 800 MHz Cortex®-M4 MPU, TFT, 35 comm. interfaces, 25 timers, adv. analog, crypto
PDF  253 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32MP151C датащи(HTML) 204 Page - STMicroelectronics

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Electrical characteristics
STM32MP151C/F
204/253
DS12501 Rev 3
6.3.27
VBAT ADC monitoring characteristics and charging characteristics
6.3.28
Temperature and VBAT monitoring characteristics for
tamper detection
TVDD
CORE
Additional error due to VDDCORE
variation
--
10
-
°C/V
tTRIM
Calibration time
-
2
-
-
ms
tWAKE_UP
Wake-up time from off state until
DTS ready signal = 1
--
50
-
μs
IDDCORE_DTS DTS consumption on VDDCORE
--
20
-
µA
1. Guaranteed by design.
Table 83. DTS characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 84. VBAT ADC monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-
26
-
kΩ
QRatio on VBAT measurement
-
4
-
-
Er(1)
1. Guaranteed by design.
Error on Q
–10
-
+10
%
tS_vbat(1)
ADC sampling time when reading VBAT input
9.8
-
-
µs
Table 85. VBAT charging characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
RBC
Battery charging resistor
VBRS in PWR_CR3= 0
-
5
-
kΩ
VBRS in PWR_CR3= 1
-
1.5
-
Table 86. Temperature and VBAT monitoring characteristics for temper detection
Symbol
Parameter
Min
Typ
Max
Unit
TEMPhigh
High temperature monitoring
105
116
126
oC
TEMPlow
Low temperature monitoring
-42
-31
-20
VBAThigh(1)
1. Monitored supply is VSW (i.e. VDD if VDD is present, VBAT otherwise)
High supply monitoring
3.47
3.59
3.73
V
VBATlow(1)
Low supply monitoring
1.3
1.34
1.43



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