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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32MP151C датащи(PDF) 187 Page - STMicroelectronics |
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STM32MP151C датащи(HTML) 187 Page - STMicroelectronics |
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187 / 253 page  DS12501 Rev 3 187/253 STM32MP151C/F Electrical characteristics 232 6.3.20 QUADSPI interface characteristics Unless otherwise specified, the parameters given in Table 71 and Table 72 for QUADSPI are derived from tests performed under the ambient temperature, Faxiss_ck frequency and VDD supply voltage conditions summarized in Table 13: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 11 • Measurement points are done at CMOS levels: 0.5×VDD • I/O compensation cell enabled • HSLV activated when VDD ≤ 2.7 V Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate function characteristics. Table 70. Switching characteristics for NAND Flash write cycles(1) Symbol Parameter Min Max Unit tw(NWE) FMC_NWE low width 4Tfmc_ker_ck-1 4Tfmc_ker_ck+1 ns tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid 0 - th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3Tfmc_ker_ck - td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 4Tfmc_ker_ck-3 - td(ALE-NWE) FMC_ALE valid before FMC_NWE low - 2Tfmc_ker_ck+1 th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 3Tfmc_ker_ck+0.5 - 1. Guaranteed by characterization results. Table 71. QUADSPI characteristics in SDR mode Symbol Parameter Conditions Min Typ Max Unit Fck1/t(CLK) QUADSPI clock frequency 2.7 V ≤ VDD < 3.6 V CL = 20 pF - - 166 MHz 1.71 V < VDD <3.6 V CL = 15 pF -- 90 tw(CLKH) QUADSPI clock high and low time - t(CLK)/2 - 0.5 - t(CLK)/2 + 0.5 ns tw(CLKL) t(CLK)/2 - 0.5 - t(CLK)/2 + 0.5 ts(IN) Data input setup time - 1.25 - - th(IN) Data input hold time - 2.75 - - tv(OUT) Data output valid time - - 1 1.5 th(OUT) Data output hold time - 0 - - |
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