N-CHANNEL

POWER MOSFET

unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain( “Miller “) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

BV/ T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/

V

nA

A

pF

ns

nC

--

--

--

--

--

--

--

--

--

--

--

--

--

V

A

I

A

See Fig 7

V

A

V

V

V

V

V

V

V

R

See Fig 13

V

I

See Fig 6 & Fig 12

Drain-to-Source Leakage Current

V

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

--

--

--

--

--

A

V

ns

C

Integral reverse pn-diode

in the MOSFET

T

,I

T

,I

di

s

SSH10N60A

600

--

2.0

--

--

--

--

--

0.66

--

--

--

--

--

190

78

20

23

85

30

74

12

35.4

--

--

4.0

100

-100

25

250

0.8

--

2270

220

90

50

55

180

70

95

--

--

8.5

1750

--

--

--

440

4.7

10

40

1.4

--

--

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

L=10mH, I

, Starting T

I

SD

10A, di/dt 150A/ s, V

DD

BV

Pulse Test : Pulse Width = 250 s, Duty Cycle

2%

Essentially Independent of Operating Temperature

∆

∆

µ

µ

µ

Ω

Ω

µ

µ

µ

O

4

O

4

O

4

O

4

O

5

O

5

Ω

O

4

O

1

O

4

Ω

µ

<

_

<

_

<

_

µ

<

_

O

1

O

2

O

3

O

4

O

5