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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32MP157C датащи(PDF) 209 Page - STMicroelectronics |
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STM32MP157C датащи(HTML) 209 Page - STMicroelectronics |
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209 / 258 page  DS12505 Rev 2 209/258 STM32MP157C Electrical characteristics 238 6.3.26 DTS characteristics 6.3.27 VBAT ADC monitoring characteristics and charging characteristics Table 84. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 °C ±5 °C VDDA = VREF+ = 3.3 V ±10 mV 0x5C00 525C[15:0](1)(2) 1. It is mandatory to read a 32-bit word and to do relevant masking and shifting to isolate the required bits. 2. This address is located inside the BSEC and the access is allowed after being enabled in the RCC. TS_CAL2 TS ADC raw data acquired at temperature of 130 °C ±2 °C VDDA = VREF+ = 3.3 V ±10 mV 0x5C00 525C[31:16](1)(2) Table 85. DTS characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fDTS Output Clock frequency (PTAT clock) - - 500 - kHz TSLOPE Average slope - - 1600 - Hz/°C TL Linearity with temperature (from Output clock frequency). VDDCORE = 1.2 V - - 3.8 °C TTOTAL_ ERROR Temperature measurement error VDDCORE = 1.2 V Temperature: -40 to 125 °C -5 - +5 °C TVDD CORE Additional error due to VDDCORE variation -- 10 - °C/V tTRIM Calibration time - 2 - - ms tWAKE_UP Wake-up time from off state until DTS ready signal = 1 -- 50 - μs IDDCORE_DTS DTS consumption on VDDCORE -- 20 - µA 1. Guaranteed by design. Table 86. VBAT ADC monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -26 - kΩ Q Ratio on VBAT measurement - 4 - - Er(1) 1. Guaranteed by design. Error on Q –10 - +10 % tS_vbat(1) ADC sampling time when reading VBAT input 9.8 - - µs |
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