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STM32MP157C датащи(PDF) 131 Page - STMicroelectronics |
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STM32MP157C датащи(HTML) 131 Page - STMicroelectronics |
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131 / 258 page ![]() DS12505 Rev 2 131/258 STM32MP157C Electrical characteristics 238 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 15 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 13: General operating conditions. Table 15. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit tRSTTEMPO(1) Reset temporization. after BOR0 released - - 377 550 µs VBOR0(1) Brown-out reset threshold 0 Rising edge 1.62 1.67 1.71 V Falling edge 1.58 1.63 1.67 VBOR1 Brown-out reset threshold 1 Rising edge 2.055 2.1 2.145 V Falling edge 1.955 2 2.045 VBOR2 Brown-out reset threshold 2 Rising edge 2.355 2.4 2.445 V Falling edge 2.255 2.3 2.345 VBOR3 Brown-out reset threshold 3 Rising edge 2.655 2.7 2.745 V Falling edge 2.555 2.6 2.645 VPVD0 Programmable Voltage Detector threshold 0 Rising edge 1.905 1.95 1.995 V Falling edge 1.805 1.85 1.895 VPVD1 Programmable Voltage Detector threshold 1 Rising edge 2.055 2.1 2.145 V Falling edge 1.955 2 2.045 VPVD2 Programmable Voltage Detector threshold 2 Rising edge 2.205 2.25 2.295 V Falling edge 2.105 2.15 2.195 VPVD3 Programmable Voltage Detector threshold 3 Rising edge 2.355 2.4 2.445 V Falling edge 2.255 2.3 2.345 VPVD4 Programmable Voltage Detector threshold 4 Rising edge 2.505 2.55 2.595 V Falling edge 2.405 2.45 2.495 VPVD5 Programmable Voltage Detector threshold 5 Rising edge 2.655 2.7 2.745 V Falling edge 2.555 2.6 2.645 VPVD6 Programmable Voltage Detector threshold 6 Rising edge 2.805 2.85 2.895 V Falling edge in RUN mode 2.705 2.75 2.795 Vhyst_BOR0 Hysteresis voltage of BOR0 Hysteresis in RUN mode -40 - mV Vhyst_BOR Hysteresis voltage of BOR Unless BOR0 - 100 - mV Vhyst_BOR_PVD Hysteresis voltage of BOR (unless BOR0) and PVD(2) Hysteresis in RUN mode - 100 - mV IDD_BOR_PVD(1)(3) BOR (unless BOR0) and PVD consumption from VDD - 0.246 - 0.626 µA |
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