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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32WB55CC датащи(PDF) 109 Page - STMicroelectronics |
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STM32WB55CC датащи(HTML) 109 Page - STMicroelectronics |
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109 / 165 page  DS11929 Rev 3 109/165 STM32WB55xx Electrical characteristics 152 Figure 18. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT, and it is forbidden to add one. 6.3.11 Internal clock source characteristics The parameters given in Table 55 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 22: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 55. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) Duty Cycle - 45 - 55 ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA= 0 to 85 °C -1 - 1 TA= -40 to 125 °C -2 - 1.5 ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.62 V to 3.6 V -0.1 - 0.05 tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5 IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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