MOS Gate Drive Applications
Switching Applications

• Small footprint due to a small and thin package
• High DC current gain : hFE = 200 to 500 (IC = −0.12 A)
• Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max)
                                                    : NPN VCE (sat) = 0.17 V (max)
• High-speed switching : PNP tf = 45 ns (typ.)
                                      : NPN tf = 50 ns (typ.)