General Description
This P-Channel Logic Level MOSFET is produced using Fairchilds advanced PowerTrench process. It has been optimized for battery power management applications.

Features
■ Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A
■ Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A
■ Low Gate Charge
■ High performance trench technology for extremely low rDS(on)
■ RoHS Compliant

Applications
■ Battery management
■ Load switch
■ Battery protection
■ DC/DC conversion