Description These N-Channel enhancement mode power field effect transist-ors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc-e, and withstand high energy pulse in the avalanche and co-mmutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • 43.5A, 100V, RDS(on) = 0.039Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 85 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating
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