| производитель | номер детали | датащи | подробное описание детали |

ACE Technology Co., LTD...
|
ACE1106M |
457Kb/7P |
N-Channel 60-V MOSFET VER 1.1 |
| ACE4494M |
477Kb/7P |
N-Channel 100-V MOSFET VER 1.1 |
| ACE9060M |
469Kb/7P |
N-Channel 60-V MOSFET VER 1.1 |

Silicon Laboratories
|
AN833 |
965Kb/5P |
SUB-1 V CURRENT SENSING |

Copal Electronics
|
W-6139 |
304Kb/13P |
22 V High Current Boost |

Sangdest Microelectroni...
|
SMCJ200CA |
199Kb/5P |
Breakdown voltage range: 220 V |

Infineon Technologies A...
|
BSC014N04LSI |
1Mb/13P |
OptiMOSTM Power-MOSFET, 40 V Rev.2.2,2016-05-04 |
| BSC014N04LS |
1Mb/13P |
OptiMOSTM Power-MOSFET, 40 V Rev.2.4,2016-05-04 |
| IPB044N15N5 |
1Mb/10P |
OptiMOS짧5 Power-Transistor, 150 V 2016-04-06 |

ACE Technology Co., LTD...
|
ACE1421M |
481Kb/7P |
P-Channel 20-V MOSFET VER 1.1 |
| ACE2020M |
536Kb/7P |
N-Channel 200-V MOSFET VER 1.1 |
| ACE2398M |
448Kb/7P |
N-Channel 60-V MOSFET VER 1.1 |
| ACE4835M |
485Kb/7P |
P-Channel 30-V MOSFET VER 1.1 |

Infineon Technologies A...
|
BSZ070N08LS5 |
1Mb/11P |
OptiMOS짧5 Power-Transistor, 80 V Rev.2.2,2016-08-18 |
| IPP076N15N5 |
1Mb/10P |
OptiMOS짧5 Power-Transistor, 150 V Rev.2.0,2016-03-03 |
| IPT210N25NFD |
1,005Kb/10P |
OptiMOS짧3 Power-Transistor, 250 V Rev.2.0,2016-01-11 |
| IPB025N08N3G |
848Kb/10P |
OptiMOS Power-Transistor, 80 V 2016-03-31 |
| IPA060N06N |
1Mb/10P |
OptiMOSTM Power-Transistor, 60 V Rev.2.2,2016-08-10 |

Vishay Siliconix
|
VS-GB55LA120UX |
181Kb/9P |
NPT Generation V IGBT technology Revision: 17-Oct-16 |
| VS-GB55NA120UX |
183Kb/9P |
NPT Generation V IGBT technology Revision: 17-Oct-16 |