| поискавой системы для электроныых деталей |
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SI-RND-R1A датащи, PDF |
| Искомое ключевое слово : 'SI-RND-R1A' - итог: 1849 (86/93) Pages |
| производитель | номер детали | датащи | подробное описание детали |
|
International Rectifier |
OMR9807SC | 146Kb/5P |
200 Krad(Si) Ultra Low Dropout Linear Regulator Hermetic Package |
|
New Jersey Semi-Conduct... |
2SC1584 | 75Kb/1P |
SI NPN POWER BJT, I(C) = 10 A TO 19.9A |
|
Hamamatsu Corporation |
S12426 | 611Kb/5P |
Low bias operation, high-speed Si APD for 900 nm |
|
List of Unclassifed Man... |
ST10-SI-NF | 913Kb/8P |
DC Advanced Microstep Drive w/ Si Programming & Encoder Input/Output |
|
PHOENIX CONTACT |
2900066 | 49Kb/3P |
Active module - UM- D37SUB/M/HC3/16DI/MR/SI/MT |
| 1135749 | 303Kb/23P |
Electronic device circuit breaker - PTCB E1 24DC/2A SI-R | |
|
NXP Semiconductors |
XC7SH86 | 75Kb/11P |
High-speed Si-gate CMOS device, 2-input EXCLUSIVE-OR function Rev. 01-7 September 2009 |
|
PHOENIX CONTACT |
1135752 | 314Kb/24P |
Electronic device circuit breaker - PTCB E1 24DC/1-8A SI-R |
| 2905808 | 432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/3A SI-C P 10/29/2015 |
|
| 2905812 | 432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/10A SI-C P 10/29/2015 |
|
| 2905799 | 432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/1A SI-R P 10/29/2015 |
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| 2905800 | 432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/2A SI-R P 10/29/2015 |
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| 2905806 | 432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/1A SI-C P 10/29/2015 |
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Hamamatsu Corporation |
C8366 | 107Kb/2P |
Current-to-voltage conversion amplifier for high-speed Si PIN photodiode |
| S1226 | 313Kb/3P |
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity | |
| S9055 | 117Kb/2P |
Si PIN photodiode Flat response characteristics up to high frequency bands | |
|
Renesas Technology Corp |
3SK324 | 85Kb/8P |
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier |
| 3SK323 | 179Kb/8P |
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier | |
|
Powerex Power Semicondu... |
QID1210006 | 798Kb/7P |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |
|
M.S. Kennedy Corporatio... |
MSK4204RH | 368Kb/6P |
Total Dose Hardened To TBD Krad(Si) (Method 1019.8 Condition A) |
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