| производитель | номер детали | датащи | подробное описание детали |
NXP Semiconductors
|
PSMN015-60BS |
207Kb/13P |
N-channel 60 V 14.8 m standard level MOSFET in D2PAK
Rev. 2-1 March 2012 |
List of Unclassifed Man...
|
HD-DVI-MM-4 |
1Mb/2P |
HDMI Cable, HDMI Male / DVI-D Male Single Link 4.0 M |
Taiyo Yuden (U.S.A.), I...
|
LEM2520T101J |
627Kb/12P |
WIRE-WOUND CHIP INDUCTORS FOR SIGNAL LINES (LB SERIES M TYPE) |
Fairchild Semiconductor
|
FDPF12N50NZT |
854Kb/10P |
N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m |
| FCB36N60NTM |
239Kb/8P |
N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓 |
| FQD30N06TM |
1Mb/8P |
N-Channel QFET짰 MOSFET 60 V, 22.7 A, 45 m廓 |
Infineon Technologies A...
|
BTS5236-2GS |
750Kb/27P |
Smart High-Side Power Switch PROFET Two Channels, 50 m廓
V 1.1, July 2007 |
Fairchild Semiconductor
|
FQU17P06TU |
1Mb/9P |
P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓 |
| FQB8P10TM |
1Mb/8P |
P-Channel QFET짰 MOSFET -100 V, -8.0 A, 185 m廓 |
| FDPF51N25YDTU |
518Kb/11P |
N-Channel UniFETTM MOSFET 250 V, 51 A, 60 m廓 |
| FDPF3860TYDTU |
589Kb/8P |
N-Channel PowerTrench짰 MOSFET 100 V, 20 A, 38.2 m廓 |
| FQD19N10LTM |
1Mb/8P |
N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓 |
| FQD11P06TM |
1Mb/9P |
P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 |
| FQT13N06TF |
774Kb/8P |
N-Channel QFET짰 MOSFET 60 V, 2.8 A, 140 m廓 |
| FQU12N20TU |
862Kb/9P |
N-Channel QFET짰 MOSFET 200 V, 9 A, 280 m廓 |
| FDPF16N50T |
1Mb/8P |
N-Channel UniFETTM MOSFET 500 V, 16 A, 380 m廓 |
| FDD18N20LZ |
1Mb/8P |
N-Channel UniFETTM MOSFET 200 V, 16 A, 125 m廓 |
Infineon Technologies A...
|
BTS4880R |
356Kb/20P |
Smart Power High-Side-Switch Eight Channels: 8 x 200 m?
2004-01-27 |
Ralston Instruments.
|
QSQS-HOS-1M |
320Kb/1P |
Quick-test hose, S.S. hose ends, 1 m (3.3 ft) long |
Fairchild Semiconductor
|
FDMC8882 |
223Kb/7P |
N-Channel Power Trench짰 MOSFET 30 V, 16 A, 14.3 m |
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