| производитель | номер детали | датащи | подробное описание детали |

Infineon Technologies A...
|
BTS6123B |
338Kb/30P |
Smart High-Side Power Switch PROFET One Channel, 10 m? V1.0, December 2005 |
| BTS6142D |
337Kb/30P |
Smart High-Side Power Switch PROFET One Channel, 12 m? V1.0, October 2005 |

Taiyo Yuden (U.S.A.), I...
|
FBMH3225HM102NT |
157Kb/1P |
Chip Bead Inductors for Power Lines (FB series M type) |

Renesas Technology Corp
|
UPA2816T1S |
148Kb/7P |
P-channel MOSFET ??0 V, ??7 A, 15.5 m廓 |

Taiyo Yuden (U.S.A.), I...
|
FBMH1608HL601-T |
161Kb/1P |
Chip Bead Inductors for Power Lines (FB series M type) |

Renesas Technology Corp
|
RJK0603DPN-E0 |
88Kb/7P |
N-Channel MOS FET 60 V, 80 A, 5.2 m |
| RJK0701DPP-E0 |
88Kb/7P |
N-Channel MOS FET 75 V, 100 A, 3.8 m |
| RJK0703DPP-E0 |
88Kb/7P |
N-Channel MOS FET 75 V, 70 A, 6.7 m |
| RJK1001DPN-E0 |
88Kb/7P |
N-Channel MOS FET 100 V, 80 A, 5.5 m |
| RJK1002DPP-E0 |
92Kb/7P |
N-Channel MOS FET 100 V, 70 A, 7.6 m |

Hynix Semiconductor
|
HMT41GA7MFR8A |
672Kb/48P |
DDR3L SDRAM ECC SO-DIMMs Based on 4Gb M-die |
| HMT451V7MFR8A |
1Mb/67P |
DDR3L SDRAM VLP Registered DIMM Based on 4Gb M-die |

Cree, Inc
|
CAS300M12BM2 |
849Kb/8P |
1.2kV, 5.0 m廓 All-Silicon Carbide Half-Bridge Module |

ON Semiconductor
|
NVD6416ANLT4G |
122Kb/7P |
N-Channel Power MOSFET 100 V, 19 A, 74 m June, 2012 ??Rev. 4 |
| NVTFS5124PL |
127Kb/6P |
Power MOSFET ??0 V, ?? A, 260 m, Single P?묬hannel May, 2013 ??Rev. 2 |

Winbond
|
W9425G6JH |
940Kb/52P |
4 M x 4 BANKS x 16 BITS DDR SDRAM |

ON Semiconductor
|
NTD5862NT4G |
125Kb/8P |
N-Channel Power MOSFET 60 V, 98 A, 5.7 m July, 2012 ??Rev. 2 |

Analog Devices
|
UG-390 |
307Kb/8P |
High Speed Evaluation Board for Half-Duplex M-LVDS Transceivers REV. 0 |

AAEON Technology
|
AEC-6520 |
292Kb/2P |
IP-65 Washable Embedded Controller With Intel짰 Celeron짰 M Processor |

Zarlink Semiconductor I...
|
ZL50400 |
737Kb/124P |
Lightly Managed/Unmanaged 9-Port 10/100 M Ethernet Switch |