| производитель | номер детали | датащи | подробное описание детали |
NXP Semiconductors
|
PMPB47XP |
245Kb/14P |
30 V, single P-channel Trench MOSFET
5 December 2012 |
| PMZB290UN |
838Kb/15P |
20 V, single N-channel Trench MOSFET
Rev. 1 ??11 May 2012 |
Unisonic Technologies
|
UT3443 |
165Kb/3P |
P-CHANNEL 2.5-V (G-S) MOSFET |
NXP Semiconductors
|
UM10561 |
1Mb/24P |
UBA2017AT reference design for 420 V (DC)
Rev. 1-13 August 2012 |
ON Semiconductor
|
NJW44H11G |
101Kb/5P |
80 V NPN, 10 A Power Transistor
September, 2013 ??Rev. 0 |
NXP Semiconductors
|
PBSS4140DPN |
373Kb/11P |
40 V low VCEsat NPN/PNP transistor
2001 Dec 13 |
| PBSS4440D |
189Kb/13P |
40 V NPN low VCEsat (BISS) transistor
Rev. 02-11 December 2009 |
Bruckewell Technology L...
|
MS13N30 |
481Kb/6P |
N-Channel 30-V (D-S) MOSFET |
| MSD20N06 |
566Kb/5P |
N-Channel 60-V (D-S) MOSFET |
| MSD30N06 |
702Kb/8P |
N-Channel 60-V (D-S) MOSFET |
| MSD30P06 |
544Kb/5P |
P-Channel 60-V (D-S) MOSFET |
Fairchild Semiconductor
|
FESD05P30ZL |
134Kb/5P |
5 V, 30 pF Unidirectional ESD Protector |
| FGA20S125P |
1Mb/8P |
1250 V, 20 A Shorted-anode IGBT |
Vishay Siliconix
|
SI2374DS |
258Kb/10P |
N-Channel 20 V (D-S) MOSFET
Rev. A, 14-Apr-14 |
| SIA477EDJT |
264Kb/8P |
P-Channel 12 V (D-S) MOSFET
Rev. A, 29-Aug-16 |
| SIR401DP |
354Kb/13P |
P-Channel 20 V (D-S) MOSFET
Rev. A, 13-Feb-12 |
| SIR622DP |
422Kb/13P |
N-Channel 150 V (D-S) MOSFET
Rev. A, 23-May-16 |
| SIR690DP |
371Kb/13P |
N-Channel 200 V (D-S) MOSFET
Rev. A, 04-Jul-16 |
| SISS71DN |
254Kb/9P |
P-Channel 100 V (D-S) MOSFET
Rev. A, 11-Jul-16 |
| SISS98DN |
345Kb/9P |
N-Channel 200 V (D-S) MOSFET
Rev. A, 23-May-16 |
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