| производитель | номер детали | датащи | подробное описание детали |

Vishay Siliconix
|
SIR422DP |
496Kb/13P |
N-Channel 40-V (D-S) MOSFET Rev. A, 13-Jul-09 |
| SIR492DP |
482Kb/14P |
N-Channel 12-V (D-S) MOSFET Rev. B, 22-Sep-08 |
| SIR808DP |
480Kb/13P |
N-Channel 25 V (D-S) MOSFET Rev. A, 04-Apr-11 |
| SIS402DN |
563Kb/13P |
N-Channel 30-V (D-S) MOSFET Rev. C, 15-Jun-09 |
| SIS414DN |
584Kb/13P |
N-Channel 30 V (D-S) MOSFET Rev. A, 03-May-10 |
| SIS438DN |
580Kb/13P |
N-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09 |
| SIZ728DT |
210Kb/14P |
N-Channel 25 V (D-S) MOSFETs Rev. A, 04-Apr-11 |
| SUM110P08-11L |
232Kb/4P |
P-Channel 80-V (D-S) MOSFET Rev. A, 24-Jul-06 |
| TN0201K |
202Kb/4P |
N-Channel 20-V (D-S) MOSFET Rev. B, 20-Feb-06 |
| TP0101K |
205Kb/4P |
P-Channel 20-V (D-S) MOSFET Rev. B, 21-Nov-05 |
| TP0202K |
202Kb/4P |
P-Channel 30-V (D-S) MOSFET |
| TP0610K |
199Kb/4P |
P-Channel 60-V (D-S) MOSFET Rev. B, 02-Jan-06 |

Shenzhen Jin Yu Semicon...
|
PT4410 |
1Mb/3P |
30 V N-Channel Enhancement Mode MOSFET |

SeCoS Halbleitertechnol...
|
SM10100DS |
275Kb/2P |
VOLTAGE 100 V 10A Schottky Barrier Rectifiers |
| SM10150D |
457Kb/2P |
Voltage 150 V 10A Schottky Barrier Rectifiers |

Shenzhen Jin Yu Semicon...
|
XP151A13COMR |
2Mb/4P |
20 V N-Channel Enhancement Mode MOSFET |

Renesas Technology Corp
|
RJH60D7ADPK |
93Kb/8P |
600 V - 50 A - IGBT Application: Inverter |
| RJH60M3DPQ-A0 |
59Kb/4P |
600 V - 17 A - IGBT Application: Inverter |
| RJH60M6DPQ-A0 |
59Kb/4P |
600 V - 40 A - IGBT Application: Inverter |

Analog Power
|
AM30N08-80D |
79Kb/3P |
N-Channel 80-V (D-S) MOSFET |