| производитель | номер детали | датащи | подробное описание детали |
Vishay Siliconix
|
SI1407DL-T1 |
80Kb/5P |
P-Channel 1.8-V (G-S) MOSFET
Rev. D, 12-Jun-06 |
| SI4825DDY-T1 |
242Kb/10P |
P-Channel 30-V (D-S) MOSFET
Rev. A, 13-Oct-08 |
| TN2404K-T1-GE3 |
226Kb/9P |
N-Channel 240 V (D-S) MOSFET
Rev. C, 23-Jul-12 |
| SI7856ADP |
143Kb/8P |
N-Channel 30-V (D-S) MOSFET
Rev. C, 03-Mar-08 |
ON Semiconductor
|
NDF06N60ZH |
116Kb/8P |
N-Channel Power MOSFET 600 V, 1.2
February, 2013 ??Rev. 6 |
Vishay Siliconix
|
SIA431DJ |
221Kb/9P |
P-Channel 20-V (D-S) MOSFET
Rev. B, 21-May-12 |
SeCoS Halbleitertechnol...
|
SM5200DS |
227Kb/2P |
VOLTAGE 200 V 5Amp. Schottky Barrier Rectifiers |
Vishay Siliconix
|
SI4842BDY |
246Kb/10P |
N-Channel 30-V (D-S) MOSFET |
NXP Semiconductors
|
PMN22XN |
856Kb/14P |
30 V, single N-channel Trench MOSFET
Rev. 1-19 January 2012 |
M/A-COM Technology Solu...
|
MASW-008566 |
119Kb/4P |
GaAs SP4T 2.5 V High Power Switch |
| MASW-008853 |
115Kb/3P |
GaAs SPDT 2.7 V High Power Switch |
Analog Devices
|
AD5260 |
610Kb/24P |
1-/2-Channel 15 V Digital Potentiometer
REV. A |
NXP Semiconductors
|
NX7002AK |
210Kb/15P |
60 V, single N-channel Trench MOSFET
10 July 2012 |
Fairchild Semiconductor
|
FFPF20UP20DNTU |
513Kb/5P |
20 A, 200 V, Ultrafast Dual Diode |
Analog Devices
|
AD8614ARTZ |
339Kb/16P |
Single and Quad 18 V Operational Amplifiers
REV. B |
Vishay Siliconix
|
SI3441DV-T1 |
52Kb/5P |
P-Channel 2.5-V (G-S) MOSFET
Rev. G, 01-Apr-02 |
| SI7884BDP-T1-E3 |
164Kb/9P |
N-Channel 40-V (D-S) MOSFET
Rev. B, 08-Sep-08 |
Texas Instruments
|
CSD19502Q5B |
1Mb/13P |
80 V N-Channel NexFET Power MOSFET |
| CSD19532Q5B |
1Mb/13P |
100 V N-Channel NexFET??Power MOSFET |
| CSD19533Q5A |
1Mb/13P |
100 V N-Channel NexFET Power MOSFETs |
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
