| производитель | номер детали | датащи | подробное описание детали |

Vishay Siliconix
|
SI7121DN |
552Kb/13P |
P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08 |

Texas Instruments
|
CSD17483F4 |
560Kb/10P |
30-V, N-Channel NexFET Power MOSFET |

Vishay Siliconix
|
SI7846DP-T1-GE3 |
148Kb/8P |
N-Channel 150-V (D-S) MOSFET Rev. F, 06-Apr-09 |
| SI7483ADP-T1-E3 |
148Kb/8P |
P-Channel 30-V (D-S) MOSFET Rev. C, 16-Feb-09 |
| SI7117DN-T1-GE3 |
561Kb/13P |
P-Channel 150 V (D-S) MOSFET Rev. C, 11-Apr-11 |
| SI4190DY-T1-GE3 |
271Kb/10P |
N-Channel 100 V (D-S) MOSFET Rev. C, 22-Nov-10 |
| SI3442BDV-T1-GE3 |
185Kb/9P |
N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09 |

Analog Devices
|
ADM1073ARUZ |
376Kb/24P |
Full-Feature ??8 V Hot Swap Controller REV. B |

Vishay Siliconix
|
SI3457CDV-T1-GE3 |
198Kb/11P |
P-Channel 30-V (D-S) MOSFET Rev. B, 02-Feb-09 |
| SI4884BDY-T1-E3 |
260Kb/10P |
N-Channel 30-V (D-S) MOSFET Rev. C, 09-Feb-09 |
| SI8429DB-T1-E1 |
215Kb/11P |
P-Channel 1.2 V (G-S) MOSFET Rev.D, 19-Aug-13 |
| SI4128DY-T1-GE3 |
257Kb/10P |
N-Channel 30-V (D-S) MOSFET Rev. C, 29-Dec-08 |

Texas Instruments
|
CSD19503KCS |
764Kb/10P |
80 V N-Channel NexFET??Power MOSFETs |

Vishay Siliconix
|
SI1315DL-T1-GE3 |
248Kb/11P |
P-Channel 8 V (D-S) MOSFET Rev. A, 29-Nov-10 |
| SI6467BDQ-T1-E3 |
208Kb/11P |
P-Channel 1.8-V (G-S) MOSFET Rev. D, 31-Mar-08 |

Zhaoxingwei Electronics...
|
LSP01 |
103Kb/2P |
P-Channel 2.5-V (G-S) MOSFET |

Vishay Siliconix
|
SI4401DY-T1 |
250Kb/8P |
P-Channel 40-V (D-S) MOSFET Rev. D, 02-Mar-09 |

STMicroelectronics
|
STPSC4H065D |
178Kb/10P |
650 V power Schottky silicon carbide diode November 2013 Rev 3 |

Vishay Siliconix
|
SI4427DY-T1 |
82Kb/5P |
P-Channel 30-V (D-S) MOSFET Rev. B, 01-Aug-05 |
| SI1302DL-T1 |
218Kb/9P |
N-Channel 30-V (D-S) MOSFET Rev. F, 20-Sep-10 |