| производитель | номер детали | датащи | подробное описание детали |

Infineon Technologies A...
|
ISC027N10NM6 |
1Mb/12P |
OptiMOSTM 6 Power-Transistor, 100 V Rev. 2.0, 2021-07-05 |
| ISC080N10NM6 |
1Mb/12P |
OptiMOSTM 6 Power-Transistor, 100 V Rev. 2.0, 2021-07-05 |

Nexperia B.V. All right...
|
PMX100UN |
277Kb/14P |
20 V, N-channel Trench MOSFET 2 December 2021 |

Vishay Siliconix
|
SI1539DL |
127Kb/8P |
Complementary 30 V (G-S) MOSFET 01-Jan-2022 |
| SI4204DY |
194Kb/9P |
Dual N-Channel 20 V MOSFET 09-Jul-2021 |

Infineon Technologies A...
|
IPTC017N12NM6 |
1Mb/11P |
OptiMOSTM 6 Power-Transistor, 120 V Rev. 2.1, 2022-12-13 |

STMicroelectronics
|
FERD40L60C |
404Kb/12P |
60 V field-effect rectifier diode September 2017 Rev 1 |

Infineon Technologies A...
|
IPTG111N20NM3FD |
1Mb/11P |
OptiMOSTM 3 Power-Transistor, 200 V Rev. 2.0, 2021-02-11 |
| BSC430N25NSFD |
942Kb/11P |
MOSFET OptiMOSTMFD Power-Transistor, 250 V Rev. 2.1, 2018-05-14 |

ON Semiconductor
|
RHRG3060-F085 |
5Mb/7P |
Hyperfast Rectifier 30 A, 600 V March, 2020 - Rev. 4 |

Toshiba Semiconductor
|
TC78H651FNG |
473Kb/14P |
1.8-V Dual bridge driver IC 2018-04-18 |

PHOENIX CONTACT
|
1336426 |
190Kb/7P |
Monitoring relay - MACX-MR-V-600 Nov 16, 2022 |

Infineon Technologies A...
|
TLE4263-2ES |
486Kb/22P |
5-V Low Dropout Voltage Regulator Rev. 1.0, April 2008 |

NEC
|
UPC3224TB |
91Kb/15P |
5 V, SILICON MMIC WIDEBAND AMPLIFIER |

NXP Semiconductors
|
PBSS4240V |
344Kb/9P |
40 V low VCEsat NPN transistor 2003 Jan 30 |
| PBSS4320T |
369Kb/10P |
20 V NPN low VCEsat transistor 2004 Mar 18 |
| PBSS4350D |
316Kb/9P |
50 V low VCEsat NPN transistor 2001 Jul 13 |
| PBSS5140V |
273Kb/7P |
40 V low VCEsat PNP transistor 2002 Mar 20 |
| PBSS5320D |
132Kb/7P |
20 V low VCEsat PNP transistor 2002 Jun 12 |
| PBSS5540Z |
150Kb/9P |
40 V low VCEsat PNP transistor 2001 Sep 21 |