NBC-M 8MS-M 8MS/.../... - NETWORK Datasheet(PDF) - STT6602 - SeCoS Halbleitertechnologie GmbH

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NBC-M 8MS-M 8MS/.../... - NETWORK датащи, PDF

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Искомое ключевое слово : 'NBC-M 8MS-M 8MS/.../... - NETWORK ' - итог: 37 (1/2) Pages

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	STT6602	2Mb/7P	N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
	SMG2305P_1108	71Kb/2P	-4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET
	SMG2334NE	297Kb/4P	3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET
	SMG5409	1Mb/4P	-2.6A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
	SSE90N06-10P	617Kb/4P	90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET
	STT6802	1Mb/4P	3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET
	SMG1330N	64Kb/2P	2.0A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET
	SMG2343	1Mb/4P	-4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET
	SSE90N04-03P	1Mb/4P	90A , 40V , RDS(ON) 5 m N-Channel Enhancement Mode MOSFET
	STT3458N	425Kb/4P	3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
	STT4443	678Kb/4P	-2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
	SMG5406	1Mb/4P	3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET
	SSG4502CE	3Mb/7P	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
	SDN520C	84Kb/2P	N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
	SGM0410	1Mb/4P	3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET
	SSPS7321P	525Kb/4P	-13A , -20V , RDS(ON) 14 m P-Ch Enhancement Mode Power MOSFET
	SSG4407P	548Kb/4P	-15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET
	SDT2P02	222Kb/4P	-2.2A, -20V, RDS(ON) 200 m(ohm) Dual-P Enhancement Mode MOSFET
	SDT3N03	343Kb/4P	3.5A, 30V, RDS(ON) 55 m(ohm) Dual-N Enhancement Mode MOSFET
	SSG4842N	121Kb/2P	23A , 40V , RDS(ON) 9 m N-Ch Enhancement Mode Power MOSFET

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