| производитель | номер детали | датащи | подробное описание детали |
NXP Semiconductors
|
SL3S1204 |
347Kb/40P |
UCODE 7
Rev. 4.0-5 March 2019 |
| BFQ591 |
251Kb/11P |
NPN 7 GHz wideband transistor
Rev. 04-2 October 2007 |
| TDA1566 |
299Kb/46P |
I2C-bus controlled dual channel 46 W/2 OHM, single channel 92 W/1 OHM amplifier
Rev. 02-20 August 2007 |
| BGY66B |
55Kb/8P |
120 MHz, 25 dB gain reverse amplifier
2001 Oct 18 |
| TFA9800J |
136Kb/17P |
2 쨈 7 W stereo power amplifier
Rev. 01-17 March 2006 |
| HEF4511B |
581Kb/19P |
BCD to 7-segment latch/decoder/driver
Rev. 06-7 December 2009 |
| HEF4543B |
107Kb/16P |
BCD to 7-segment latch/decoder/driver
Rev. 05-27 October 2009 |
| NAFE11388 |
1Mb/111P |
Universal ±25 V 8-Input Low Power AFE
Rev. 1 - 4 November 2022 |
| NAFE71388 |
1Mb/112P |
Universal ±25 V 8-Input High Speed AFE
Rev. 1 - 4 November 2022 |
| NAFE11388 |
2Mb/112P |
Universal ±25 V 8-Input Low Power AFE
Rev. 2 - 21 March 2023 |
| NAFE71388 |
2Mb/112P |
Universal ±25 V 8-Input High Speed AFE
Rev. 2 - 21 March 2023 |
| MC12XS6D2 |
1Mb/71P |
10 mOhm and 25 mOhm high-side switches
Rev. 4.0, 9/2020 |
| NAFE11388 |
2Mb/114P |
Universal ±25 V 8-Input Low Power AFE
Rev. 3 - 30 October 2023 |
| CGD944C |
284Kb/7P |
870 MHz, 25 dB gain power doubler amplifier
Rev. 02-16 November 2009 |
| CGD1044H |
300Kb/7P |
1 GHz, 25 dB gain high output power doubler
Rev. 02-16 November 2009 |
| CGD1044H |
51Kb/7P |
1 GHz, 25 dB gain high output power doubler
Rev. 01 - 10 October 2007 |
| PESD3V3S1UL-315 |
313Kb/15P |
Unidirectional ESD protection diodes Rev. 3 ??25 October 2011
Rev. 3-25 October 2011 |
| PBSS4021NX |
257Kb/14P |
20 V, 7 A NPN low VCEsat (BISS) transistor
11 December 2012 |
| MC10XS3425 |
1Mb/52P |
Quad high-side switch (dual 10 mOhm, dual 25 mOhm) |
| PESD5V0L7BAS |
109Kb/14P |
Low capacitance 7-fold bidirectional ESD protection diode arrays
Rev. 03-20 August 2009 |
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
