| производитель | номер детали | датащи | подробное описание детали |
STMicroelectronics
|
SCT040H120G3AG |
386Kb/14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
Rev 1 - October 2022 |
| STX8NM60N |
706Kb/19P |
N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK |
| SCT011H75G3AG |
395Kb/14P |
Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package
Rev 1 - March 2022 |
| SCTW40N120G2VAG |
210Kb/12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package
Rev 3 - November 2020 |
| A2C25S12M3 |
948Kb/18P |
ACEPACK 2 converter inverter brake, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC
April 2019 Rev 4 |
| SCTW100N65G2AG |
423Kb/11P |
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
DS11643 - Rev 2 - November 2018 |
| A2C25S12M3-F |
1Mb/18P |
ACEPACKTM 2 converter inverter brake, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC
November 2018 Rev 3 |
| STL15N60M2-EP |
488Kb/16P |
N-channel 600 V, 0.389 廓 typ., 7 A MDmesh??M2 EP Power MOSFET in a PowerFLAT??5x6 HV package |
| STFU11N65M2 |
454Kb/12P |
N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package
June 2019 Rev 2 |
| STL13N60M6 |
796Kb/15P |
N-channel 600 V, 330 m廓 typ., 7 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package
May 2019 |
| SCT040H65G3SAG |
227Kb/12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package
February 2022 Rev1 |
| SCTWA35N65G2VAG |
243Kb/12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
Rev 1 - August 2020 |
| STH30N65DM6-7AG |
816Kb/14P |
Automotive-grade N-channel 650 V, 102 m廓 typ., 28 A MDmesh DM6 Power MOSFET in an H짼PAK-7 package
June 2021 |
| STH80N10LF7-2AG |
626Kb/14P |
Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package
DS11708 - Rev 2 - January 2019 |
| STH12N120K5-2AG |
405Kb/15P |
Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package
Rev 1 - October 2022 |
| STX30NM60ND |
798Kb/18P |
N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 |
| STL8DN10LF3 |
917Kb/15P |
Automotive-grade dual N-channel 100 V, 25 m??typ., 7.8 A STripFET??F3 Power MOSFET in a PowerFLAT??5x6 double island package
July 2015 Rev 6 |
| STM32F101X8 |
1Mb/89P |
Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces |
| STM32F101RBT6 |
1Mb/89P |
Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces |
| STM32F101X8 |
1Mb/85P |
Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces |
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