| производитель | номер детали | датащи | подробное описание детали |

First Silicon Co., Ltd
|
KBPC35005 |
237Kb/2P |
nullBlocking voltage to 600 V |
| MAC97A6 |
204Kb/5P |
nullBlocking voltage to 600 V |
| FTK235NSOT883 |
600Kb/5P |
30 V, single N-channel Trench MOSFET |
| FTK1012 |
491Kb/6P |
N-Channel 1.8-V (G-S) MOSFET |
| FTK1013 |
493Kb/6P |
P-Channel 1.8-V (G-S) MOSFET |
| FTK9452 |
337Kb/2P |
N-Channel 20-V(D-S) MOSFET |
| FTK1013SOT883 |
459Kb/5P |
P-Channel 1.8-V (G-S) MOSFET |
| GBJ6A |
247Kb/2P |
High case dielectric strength of 2500 V |
| FTK3443 |
242Kb/3P |
P-Channel 20-V(D-S) MOSFET |
| FTK1012S |
353Kb/5P |
N-Channel 1.8-V (G-S) MOSFET |
| FTK1012SOT883 |
333Kb/5P |
N-Channel 1.8-V (G-S) MOSFET |
| FTK1013S |
472Kb/6P |
P-Channel 1.8-V (G-S) MOSFET |
| FTK2307 |
423Kb/4P |
P-Channel 30-V(D-S) MOSFET |
| FTK9451 |
284Kb/2P |
P-Channel 20-V(D-S) MOSFET |
| S2AF |
552Kb/2P |
Reverse Voltage - 50 to 1000 V , Forward Current - 2A |
| S1AF |
608Kb/2P |
Reverse Voltage - 50 to 1000 V , Forward Current - 1 A |
| FTK3043P |
318Kb/5P |
20 V, 285 mA, P?묬hannel with ESD Protection, SOT??23 |
| MPBW50N65EH |
956Kb/7P |
Easy parallel switching capability due to positive temperature coefficient in V CEsat 2022. 01. 18 Revision No : 0 |
| FTK4409 |
436Kb/4P |
Small Signal MOSFET 25 V, 0.75 A, Single, N?묬hannel, ESD Protection |
| FTK7002EN |
291Kb/5P |
Small Signal MOSFET 30 V, 154 mA, Single, N?묬hannel, Gate ESD Protection |