| производитель | номер детали | датащи | подробное описание детали |

Samsung semiconductor
|
IRFS641 |
308Kb/5P |
Improved inductive ruggedness |
| SSP4N80 |
296Kb/5P |
improved inductive ruggedness |

Bruckewell Technology L...
|
MS85N06 |
725Kb/3P |
Improved dv/dt Capability, High Ruggedness |
| MS75N075 |
441Kb/4P |
Improved dv/dt Capability, High Ruggedness |

International Rectifier
|
IRFP4137PBF |
389Kb/8P |
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |

Advanced Semiconductor
|
HVV1011-1000L |
376Kb/3P |
Excellent Ruggedness |
| HVV0405-1000 |
353Kb/3P |
Excellent Ruggedness |

Littelfuse
|
MG12105S-BA1MM |
1Mb/6P |
High Ruggedness |

Advanced Semiconductor
|
HVV1011-180L |
524Kb/3P |
Excellent Ruggedness |

SemiHow Co.,Ltd.
|
HRLO120N10H |
504Kb/7P |
Enhanced Avalanche Ruggedness |
| HRP105N15H |
171Kb/7P |
Enhanced Avalanche Ruggedness |

Alpha & Omega Semicondu...
|
AOK60B65H1 |
528Kb/9P |
Short-circuit ruggedness |

STMicroelectronics
|
STL220N6F7 |
744Kb/13P |
High avalanche ruggedness |
| STS7P4LLF6 |
396Kb/13P |
High avalanche ruggedness |
| STH170N8F7-2 |
823Kb/15P |
High avalanche ruggedness |
| STL86N3LLH6AG |
1,009Kb/16P |
High avalanche ruggedness February 2015 Rev 3 |
| STL4P3LLH6 |
766Kb/13P |
High avalanche ruggedness December 2014 Rev 2 |
| STL8N6F7 |
893Kb/12P |
High avalanche ruggedness August 2015 Rev 1 |
| STL30P3LLH6 |
1Mb/15P |
High avalanche ruggedness January 2014 Rev 3 |
| STS30N3LLH6 |
776Kb/13P |
High avalanche ruggedness July 2009 Rev 2 |