VDS Datasheet(PDF) - BS170F - Diodes Incorporated

производитель	номер детали	датащи	подробное описание детали
Diodes Incorporated	BS170F	26Kb/1P	60Volt VDS
Diodes Incorporated	BS250P	52Kb/1P	45 Volt VDS
Leshan Radio Company	LP2035LT1G	947Kb/5P	20V P-Channel MOSFET VDS =-20V
Gunter Seniconductor Gm...	GFC360	102Kb/1P	N Channel Power MOSFET with high VDS
Leshan Radio Company	LP137N3T5G	563Kb/6P	20V P-Channel Enhancement MOSFET VDS = -20V
Gunter Seniconductor Gm...	GFC460	102Kb/1P	N Channel Power MOSFET with high VDS
Leshan Radio Company	LP2323LT1G	424Kb/3P	12V P-Channel Enhancement MOSFET VDS =-12V
	LPB3408LT1G	525Kb/5P	30V P-Channel (D-S) MOSFET VDS = -30V
	S-LP3407LT1G	476Kb/6P	30V P-Channel Enhancement-Mode MOSFET VDS = -30V
	LNB2294LT1G	606Kb/5P	110V N-Channel Enhancement-Mode MOSFET VDS= 110V
	LN2306ELT1G	715Kb/5P	N-Channel 30V(D-S) MOSFET VDS= 30V
	LP3401ALT1G	852Kb/3P	P-Channel 30V( D - S) MOSFET VDS =-30V
	LP4129T1G	308Kb/3P	20V P-Channel (D-S) MOSFET VDS = -20V
	LP3443LT1G	338Kb/6P	20V P-Channel Enhancement-Mode MOSFET VDS = -20V
Fuji Electric	F9221L	225Kb/10P	F9222L VDS 500V,RDS 0.9 Ohm,VCC 16.5V
Leshan Radio Company	LP4217T1G	256Kb/3P	20V P-Channel (D-S) MOSFET VDS = -20V
International Rectifier	IRSF3010	483Kb/11P	FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm)
	IRFR4105Z	206Kb/11P	Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)
	IRSF3011	536Kb/12P	FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=200mohm)
	IRSF3031	349Kb/5P	FULLY PROTECTED DMOS POWER SWITCH(Vds=50V, Rds(on)=200mohm)

VDS датащи, PDF

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