| производитель | номер детали | датащи | подробное описание детали |

SHENZHEN YONGERJIA INDU...
|
MA147 |
62Kb/1P |
SWITHING DIODE |
| MA147 |
62Kb/1P |
SWITHING DIODE |

Bruckewell Technology L...
|
BAV16W_1N4148W |
302Kb/4P |
FAST SWITHING DIODES |

Microdiode Semiconducto...
|
1N4148W |
877Kb/3P |
FAST SWITHING DIODES |

Bruckewell Technology L...
|
1N4148WS |
319Kb/4P |
FAST SWITHING DIODES |

Shanghai Shunye Electro...
|
BAV16W |
754Kb/2P |
FAST SWITHING DIODES |
| BAV16W |
735Kb/2P |
FAST SWITHING DIODES |

Microdiode Semiconducto...
|
1N4148W |
529Kb/2P |
FAST SWITHING DIODES |
| BAV16W |
596Kb/2P |
FAST SWITHING DIODES |

SHIKUES Electronics
|
BAS70WS |
1Mb/3P |
Low-Turn-on Volatage, Fast Swithing |
| BAS70W |
1Mb/2P |
Low Turn-on Voltage, Fast Swithing |
| SK75N06 |
1Mb/2P |
75A, 60V N-Channel Fast Swithing MOSFET |

Toshiba Semiconductor
|
CMS05 |
164Kb/4P |
SWITHING MODE POWER SUPPLY APPLICATIONS PORTABLE EQUIPMENT BATTARY APPLICATIONS |

Isahaya Electronics Cor...
|
RTBN131AP1 |
119Kb/2P |
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RTBN141AP1 |
119Kb/2P |
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RTGN141AP |
102Kb/4P |
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RTBN14BAP1 |
119Kb/2P |
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RTBN234AP1 |
119Kb/2P |
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RTGN426AP |
167Kb/4P |
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE |