| производитель | номер детали | датащи | подробное описание детали |

Zowie Technology Corpor...
|
SCD13PH |
45Kb/2P |
Objective Specification |
| SCD33PH |
42Kb/2P |
Schottky Barrier Diode Objective Specification |
| SCD23PH |
42Kb/2P |
Schottky Barrier Diode Objective Specification |
| SSCD103PSH |
156Kb/2P |
Schottky Barrier Diode Objective Specification |
| SSCD203PSH |
213Kb/2P |
Schottky Barrier Diode Objective Specification |

STMicroelectronics
|
RM0029 |
13Mb/1740P |
The primary objective of this document |
| AN4275 |
388Kb/11P |
The objective of this document is to briefly |
| UM0434 |
3Mb/390P |
The primary objective of this user?셲 manual is to describe |

Shanghai Leiditech Elec...
|
SMD4532-400 |
271Kb/3P |
SPECIFICATION ELECTRICAL SPECIFICATION |

Samsung semiconductor
|
CL10A226MQ8NRNE |
140Kb/2P |
SPECIFICATION |
| CL21B105KBFNNNF |
139Kb/2P |
SPECIFICATION |
| CL21B473KCFNNNE |
140Kb/2P |
SPECIFICATION |

List of Unclassifed Man...
|
ISR3SAD100 |
93Kb/1P |
SPECIFICATION |

Samsung semiconductor
|
CL05A474KQ5NNNC |
135Kb/2P |
SPECIFICATION |
| CL05A475MP5NRNC |
169Kb/2P |
SPECIFICATION |
| CL05C100JB5NNNC |
82Kb/2P |
SPECIFICATION |
| CL31A226KAHNNNE |
80Kb/2P |
SPECIFICATION |
| CL31A226KQHNNNE |
80Kb/2P |
SPECIFICATION |
| CL31B105KCHSNNE |
152Kb/2P |
SPECIFICATION |

Fuji Electric
|
PH967C6 |
136Kb/12P |
SPECIFICATION |