| производитель | номер детали | датащи | подробное описание детали |

GSI Technology
|
GS8330DW36 |
583Kb/30P |
Double Late Write SigmaRAM |
| GS8170DW36AC |
1,004Kb/32P |
18Mb 誇1x1Dp CMOS I/O Double Late Write SigmaRAM |
| GS8171DW36AC |
1,007Kb/33P |
18Mb 誇1x1Dp HSTL I/O Double Late Write SigmaRAM |
| GS8170DW36C |
1Mb/27P |
18Mb 誇1x1Dp CMOS I/O Double Late Write SigmaRAM |
| GS8330LW36C |
579Kb/30P |
36Mb 誇1x1Lp CMOS I/O Late Write SigmaRAM |
| GS8170LW36 |
884Kb/27P |
18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM |
| GS8170LW36AC |
999Kb/32P |
18Mb 誇1x1Lp CMOS I/O Late Write SigmaRAM |

Samsung semiconductor
|
K7Z167288B |
240Kb/20P |
512Kx36 & 256Kx72 DLW(Double Late Write) RAM |

Motorola, Inc
|
MCM69R736A |
224Kb/20P |
4M Late Write HSTL |
| MCM69R737A |
212Kb/20P |
4M Late Write LVTTL |
| MCM69L737A |
211Kb/20P |
4M Late Write LVTTL |
| MCM63R836A |
385Kb/21P |
8M Late Write HSTL |
| MCM69R736C |
520Kb/20P |
4M Late Write HSTL |
| MCM69L736A |
225Kb/20P |
4M Late Write HSTL |
| MCM69L738A |
212Kb/20P |
4M Late Write 2.5 V I/O |

Integrated Silicon Solu...
|
IS61DDB42M18A |
807Kb/32P |
Synchronous pipeline read with late write operation |
| IS61DDB44M18A |
814Kb/31P |
Synchronous pipeline read with late write operation |
| IS61QDB42M18A |
798Kb/30P |
Synchronous pipeline read with late write operation |

Motorola, Inc
|
MCM69R738C |
511Kb/20P |
4M Late Write 2.5 V I/O |
| MCM69R738A |
213Kb/20P |
4M Late Write 2.5 V I/O |