30 Datasheet(PDF) - SBR30200RF_11 - SeCoS Halbleitertechnologie GmbH

поискавой системы для электроныых деталей

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30 датащи, PDF

: Pan Jit International Inc.(2)Panasonic Battery Group(1)Panasonic Semiconductor(11)PANDUIT CORP.(1)Pasternack Enterprises, Inc.(378)Peregrine Semiconductor(3)Peregrine Semiconductor Corp.(3)Phihong USA Inc.(7)PHOENIX CONTACT(62)Picker Components(30)Power Analog Micoelectronics(1)Power Integrations, Inc.(13)Power Mate Technology Co., LTD(8)Power Systems GmbH+Co.KG(5)Power-One(6)Powerbox(10)PowerDynamics, Inc(1)Powerex Power Semiconductors(26)PREMO CORPORATION S.L(2)Protek Devices(1)PUI audio inc.(3)Qorvo, Inc(19)Qualtek Electronics Corporation(2)Quanzhou Jinmei Electronic Co.,Ltd.(2)QUARTZCOM the communications company(1)Ralston Instruments.(10)Recom International Power(30)Rectron Semiconductor(25)Renesas Technology Corp(36)RFE international(1)RFX Ltd.(1)Rohm(2)Roithner LaserTechnik GmbH(2)RSG Electronic Components GmbH(4)Samsung semiconductor(1)Samtec, Inc(2)Sanken electric(5)Sanyo Semicon Device(6)Schneider Electric(717)SCHOTT CORPORATION(5)Schurter Inc.(19)SeCoS Halbleitertechnologie GmbH(26)Seme LAB(1)SEMTECH ELECTRONICS LTD.(1)Sensitron(1)SG Micro Corp(2)Shanghai awinic technology co.,ltd(1)Shanghai Lunsure Electronic Tech(2)Shanghai Shunye Electronics Co.,Ltd.(5)Sharp Corporation(2)Shenzhen Huazhimei Semiconductor Co., Ltd(2)Shenzhen Jin Yu Semiconductor Co., Ltd.(2)Shenzhen Luguang Electronic Technology Co., Ltd(1)Shenzhen Ping Sheng Electronics Co., Ltd.(1)Shenzhen Tuofeng Semiconductor Technology Co(15)SHIKUES Electronics(3)Shindengen Electric Mfg.Co.Ltd(1)Siemens Semiconductor Group(8)SiGe Semiconductor, Inc.(1)Silicon Laboratories(3)Sirectifier Global Corp.(1)SIRENZA MICRODEVICES(2)Skyworks Solutions Inc.(10)SL Power Electronics(4)SMC Diode Solutions Co. LTD(1)Solid States Devices, Inc(51)Sony Corporation(1)SparkFun Electronics(5)Spectrum Microwave, Inc.(1)Stealth Microwave, Inc.(6)STMicroelectronics(179)Sumida Corporation(1)SYNERGY MICROWAVE CORPORATION(3)SynQor Worldwide Headquarters(7)TAI-SAW TECHNOLOGY CO., LTD.(16)TALEMA Group. LLC(1)Taoglas antenna solutions(9)TE Connectivity Ltd(13)TECH PUBLIC Electronics co LTD(3)Teledyne Technologies Incorporated(9)TEMIC Semiconductors(1)Tensility International Corp.(46)Texas Instruments(109)Texas Instruments(60)Thinki Semiconductor Co., Ltd.(70)Tiger Electronic Co.,Ltd(1)Toppower Electronic Technology Limited(1)Toshiba Semiconductor(3)Total Power International(2)TRACO Electronic AG(22)Transcom, Inc.(4)TRANSYS Electronics Limited(2)Tripp Lite. All Rights Reserved(121)TriQuint Semiconductor(20)TT Electronics.(2)Tumbler Technologies + TRUMPower(12)Tyco Electronics(54)
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Искомое ключевое слово : '30' - итог: 26 (1/2) Pages

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	SBR30200RF	366Kb/2P	30 Amp Schottky Barrier Rectifiers
	SBR30150RF	271Kb/2P	30 Amp Schottky Barrier Rectifiers
	SBRS3080F	269Kb/2P	30 Amp Schottky Barrier Rectifiers
	SBRS3080F	269Kb/2P	30 Amp Schottky Barrier Rectifiers
	SBR30150RF	271Kb/2P	30 Amp Schottky Barrier Rectifiers
	SBR30100RF	254Kb/2P	30 Amp Schottky Barrier Rectifiers
	SBR30200RF	366Kb/2P	30 Amp Schottky Barrier Rectifiers
	SM3040D	125Kb/2P	30 Amp Surface Mount Schottky Barrier Rectifiers
	SCS520G	253Kb/2P	0.1 A , 30 V Schottky Barrier Rectifiers
	SCS0530P	270Kb/2P	0.5 A, 30 V Schottky Barrier Rectifiers
	SCS0530V	269Kb/2P	0.5 A, 30 V Schottky Barrier Rectifiers
	SBR30100RF	254Kb/2P	Voltage 100 V 30 Amp Schottky Barrier Rectifiers
	SCS715T	126Kb/2P	30 mA, 40 V Small Signal Schottky Diode
	SCS481N	111Kb/1P	VOLTAGE 30 V, 0.2 A Schottky Barrier Diode
	2SC3650	269Kb/2P	1.2 A , 30 V NPN Plastic-Encapsulate Transistor
	SCS751DS	98Kb/2P	30 mA, 40 V Plastic-Encapsulate Schottky Diodes
	SCS521DS	129Kb/2P	0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers
	SCS520DS	115Kb/2P	0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers
	SSG4502CE	3Mb/7P	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
	SSG4512CE	3Mb/7P	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m

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