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2SC3502 Datasheet with Chat AI
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    • Part No.2SC3502
    ManufacturerFOSHAN
    Size999 Kbytes
    Pages6 pages
    DescriptionSilicon NPN transistor in a TO-126F Plastic Package.
    Datasheet Summary with AI

    2SC3502

    Description: TO-126F plastic-packaged NPN semiconductor transistor.

    Features: High breakdown voltage, small reverse transfer capacitance, and excellent high-frequency characteristics.

    Applications: Ultrahigh-definition CRT display, video output applications.

    Pinning:
    ️· PIN1: Emitter
    ️· PIN2: Collector
    ️· PIN3: Base

    hFE Classifications:

    hFE Range C D E F
    40～80 60～120 100～200 160～320

    Absolute Maximum Ratings (Ta=25℃):

    ️· Collector to Base Voltage: 200 V
    ️· Collector to Emitter Voltage: 200 V
    ️· Emitter to Base Voltage: 5.0 V
    ️· Collector Current - Continuous: 100 mA
    ️· Collector Current – Continuous(Pulse): 200 mA
    ️· Collector Power Dissipation: 1.2 W
    ️· Junction Temperature: 150 ℃
    ️· Storage Temperature Range: -55～150 ℃

    Electrical Characteristics (Ta=25℃):

    ️· Collector Cut-Off Current: 0.1 μA
    ️· Emitter Cut-Off Current: 0.1 μA
    ️· DC Current Gain: 40-320
    ️· Collector to Emitter Saturation Voltage: 0.6 V
    ️· Base to Emitter Saturation Voltage: 1.0 V
    ️· Transition Frequency: 150 MHz
    ️· Collector output capacitance: 2.6 pF
    ️· Reverse Transfer Capacitance: 1.7 pF

    Marking: BR (Company Code), C3502 (Model Number), C (hFE Classification), (Production Batch Number).

    2SC3502

    Description: TO-126F plastic-packaged NPN semiconductor transistor.

    Features: High breakdown voltage, small reverse transfer capacitance, and excellent high-frequency characteristics.

    Applications: Ultrahigh-definition CRT display, video output applications.

    Pinning:
    ️· PIN1: Emitter
    ️· PIN2: Collector
    ️· PIN3: Base

    hFE Classifications:

    hFE Range C D E F
    40～80 60～120 100～200 160～320

    Absolute Maximum Ratings (Ta=25℃):

    ️· Collector to Base Voltage: 200 V
    ️· Collector to Emitter Voltage: 200 V
    ️· Emitter to Base Voltage: 5.0 V
    ️· Collector Current - Continuous: 100 mA
    ️· Collector Current – Continuous(Pulse): 200 mA
    ️· Collector Power Dissipation: 1.2 W
    ️· Junction Temperature: 150 ℃
    ️· Storage Temperature Range: -55～150 ℃

    Electrical Characteristics (Ta=25℃):

    ️· Collector Cut-Off Current: 0.1 μA
    ️· Emitter Cut-Off Current: 0.1 μA
    ️· DC Current Gain: 40-320
    ️· Collector to Emitter Saturation Voltage: 0.6 V
    ️· Base to Emitter Saturation Voltage: 1.0 V
    ️· Transition Frequency: 150 MHz
    ️· Collector output capacitance: 2.6 pF
    ️· Reverse Transfer Capacitance: 1.7 pF

    Marking: BR (Company Code), C3502 (Model Number), C (hFE Classification), (Production Batch Number).

    Part No.2SC3502
    ManufacturerFOSHAN
    Size999 Kbytes
    Pages6 pages
    DescriptionSilicon NPN transistor in a TO-126F Plastic Package.
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