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  • Part No.2SC3779
    ManufacturerFOSHAN
    Size912 Kbytes
    Pages6 pages
    DescriptionSilicon NPN transistor in a TO-92 Plastic Package
    Datasheet Summary with AI

    # 2SC3779 NPN Transistor

    ## General Description

    ️· TO-92 plastic surface mount NPN transistor.
    ️· Designed for UHF low-noise amplifiers and broadband applications.

    ## Features

    ️· Low noise figure
    ️· High power gain
    ️· High transition frequency

    ## Absolute Maximum Ratings (Ta = 25°C)

    Parameter Rating Unit
    Collector-Base Voltage (VCBO) 20 V
    Collector-Emitter Voltage (VCEO) 12 V
    Emitter-Base Voltage (VEBO) 3.0 V
    Collector Current (IC) 100 mA
    Base Current (IB) 40 mA
    Collector Power Dissipation (PC) 600 mW
    Junction Temperature (Tj) 150 °C
    Storage Temperature Range (Tstg) -55 to 150 °C

    ## Electrical Characteristics

    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector Cut-off Current ICBO VCB = 12V, IE = 0 1.0 μA
    Emitter Cut-off Current IEBO VEB = 2.0V, IC = 0 10 μA
    DC Current Gain hFE VCE = 10V, IC = 20mA 40 200
    Transition Frequency fT VCE = 10V, IC = 20mA 5.0 GHz
    Output Capacitance Cob VCB = 10V, f = 1.0MHz 1.0 pF
    Reverse Transfer Capacitance Cre VCB = 10V, f = 1.0MHz 0.7 pF
    Forward Transfer Gain VCE = 10V, IC = 20mA, f = 0.9 GHz 10 dB
    Maximum Available Power Gain MAG VCE = 10V, IC = 20mA, f = 0.9 GHz 14 dB
    Noise Figure NF VCE = 10V, IC = 5.0mA, f = 0.9 GHz 3.0 dB

    ## Package Information

    ️· Available in TO-92 package.
    ️· Bulk Packaging: 1,000 units/bag, 10 bags/inner box, 5/10 inner boxes/outer box.
    ️· Tape & Reel Packaging: 3,000 units/reel.



    Note: Refer to the datasheet for detailed marking instructions, soldering profiles, and other specifications.

    # 2SC3779 NPN Transistor

    ## General Description

    ️· TO-92 plastic surface mount NPN transistor.
    ️· Designed for UHF low-noise amplifiers and broadband applications.

    ## Features

    ️· Low noise figure
    ️· High power gain
    ️· High transition frequency

    ## Absolute Maximum Ratings (Ta = 25°C)

    Parameter Rating Unit
    Collector-Base Voltage (VCBO) 20 V
    Collector-Emitter Voltage (VCEO) 12 V
    Emitter-Base Voltage (VEBO) 3.0 V
    Collector Current (IC) 100 mA
    Base Current (IB) 40 mA
    Collector Power Dissipation (PC) 600 mW
    Junction Temperature (Tj) 150 °C
    Storage Temperature Range (Tstg) -55 to 150 °C

    ## Electrical Characteristics

    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector Cut-off Current ICBO VCB = 12V, IE = 0 1.0 μA
    Emitter Cut-off Current IEBO VEB = 2.0V, IC = 0 10 μA
    DC Current Gain hFE VCE = 10V, IC = 20mA 40 200
    Transition Frequency fT VCE = 10V, IC = 20mA 5.0 GHz
    Output Capacitance Cob VCB = 10V, f = 1.0MHz 1.0 pF
    Reverse Transfer Capacitance Cre VCB = 10V, f = 1.0MHz 0.7 pF
    Forward Transfer Gain VCE = 10V, IC = 20mA, f = 0.9 GHz 10 dB
    Maximum Available Power Gain MAG VCE = 10V, IC = 20mA, f = 0.9 GHz 14 dB
    Noise Figure NF VCE = 10V, IC = 5.0mA, f = 0.9 GHz 3.0 dB

    ## Package Information

    ️· Available in TO-92 package.
    ️· Bulk Packaging: 1,000 units/bag, 10 bags/inner box, 5/10 inner boxes/outer box.
    ️· Tape & Reel Packaging: 3,000 units/reel.



    Note: Refer to the datasheet for detailed marking instructions, soldering profiles, and other specifications.

    Part No.2SC3779
    ManufacturerFOSHAN
    Size912 Kbytes
    Pages6 pages
    DescriptionSilicon NPN transistor in a TO-92 Plastic Package
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