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Hello, Please ask a question about 2SC3779 Datasheet
# Example questions:
➢ What are the dimensions of the outer box for bulk packaged to-92 transistors?
➢ What is the maximum collector to base voltage (vcbo) for this transistor?
➢ What are the typical and maximum values for the dc current gain (hfe)?
# 2SC3779 NPN Transistor
## General Description
️· TO-92 plastic surface mount NPN transistor.
️· Designed for UHF low-noise amplifiers and broadband applications.
## Features
️· Low noise figure
️· High power gain
️· High transition frequency
## Absolute Maximum Ratings (Ta = 25°C)
| Parameter | Rating | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 20 | V |
| Collector-Emitter Voltage (VCEO) | 12 | V |
| Emitter-Base Voltage (VEBO) | 3.0 | V |
| Collector Current (IC) | 100 | mA |
| Base Current (IB) | 40 | mA |
| Collector Power Dissipation (PC) | 600 | mW |
| Junction Temperature (Tj) | 150 | °C |
| Storage Temperature Range (Tstg) | -55 to 150 | °C |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector Cut-off Current | ICBO | VCB = 12V, IE = 0 | 1.0 | μA | ||
| Emitter Cut-off Current | IEBO | VEB = 2.0V, IC = 0 | 10 | μA | ||
| DC Current Gain | hFE | VCE = 10V, IC = 20mA | 40 | 200 | ||
| Transition Frequency | fT | VCE = 10V, IC = 20mA | 5.0 | GHz | ||
| Output Capacitance | Cob | VCB = 10V, f = 1.0MHz | 1.0 | pF | ||
| Reverse Transfer Capacitance | Cre | VCB = 10V, f = 1.0MHz | 0.7 | pF | ||
| Forward Transfer Gain | VCE = 10V, IC = 20mA, f = 0.9 GHz | 10 | dB | |||
| Maximum Available Power Gain | MAG | VCE = 10V, IC = 20mA, f = 0.9 GHz | 14 | dB | ||
| Noise Figure | NF | VCE = 10V, IC = 5.0mA, f = 0.9 GHz | 3.0 | dB |
# 2SC3779 NPN Transistor
## General Description
️· TO-92 plastic surface mount NPN transistor.
️· Designed for UHF low-noise amplifiers and broadband applications.
## Features
️· Low noise figure
️· High power gain
️· High transition frequency
## Absolute Maximum Ratings (Ta = 25°C)
| Parameter | Rating | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 20 | V |
| Collector-Emitter Voltage (VCEO) | 12 | V |
| Emitter-Base Voltage (VEBO) | 3.0 | V |
| Collector Current (IC) | 100 | mA |
| Base Current (IB) | 40 | mA |
| Collector Power Dissipation (PC) | 600 | mW |
| Junction Temperature (Tj) | 150 | °C |
| Storage Temperature Range (Tstg) | -55 to 150 | °C |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector Cut-off Current | ICBO | VCB = 12V, IE = 0 | 1.0 | μA | ||
| Emitter Cut-off Current | IEBO | VEB = 2.0V, IC = 0 | 10 | μA | ||
| DC Current Gain | hFE | VCE = 10V, IC = 20mA | 40 | 200 | ||
| Transition Frequency | fT | VCE = 10V, IC = 20mA | 5.0 | GHz | ||
| Output Capacitance | Cob | VCB = 10V, f = 1.0MHz | 1.0 | pF | ||
| Reverse Transfer Capacitance | Cre | VCB = 10V, f = 1.0MHz | 0.7 | pF | ||
| Forward Transfer Gain | VCE = 10V, IC = 20mA, f = 0.9 GHz | 10 | dB | |||
| Maximum Available Power Gain | MAG | VCE = 10V, IC = 20mA, f = 0.9 GHz | 14 | dB | ||
| Noise Figure | NF | VCE = 10V, IC = 5.0mA, f = 0.9 GHz | 3.0 | dB |
| Part No. | 2SC3779 |
| Manufacturer | FOSHAN |
| Size | 912 Kbytes |
| Pages | 6 pages |
| Description | Silicon NPN transistor in a TO-92 Plastic Package |
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