# IRFPC42R N-Channel MOSFET Transistor

## Features

· Drain Current (ID): 5.9A @ TC=25°C
· Drain-Source Voltage (VDSS): 600V (min)
· Static Drain-Source On-Resistance (RDS(on)): 1.6Ω (max)
· Fast switching capability

## Description

· Designed for switch mode power supplies and general purpose applications.

## Absolute Maximum Ratings (Ta=25°C)

· Drain-Source Voltage (VDSS): 600V
· Gate-Source Voltage (VGS): ±20V
· Drain Current (ID): 5.9A
· Single Pulse Drain Current (IDM): 24A
· Total Dissipation (PD): 150W

· Operating Junction Temperature (TJ): -55°C to 150°C
· Storage Temperature (Tstg): -55°C to 150°C

## Thermal Characteristics

· Junction-to-Case Thermal Resistance (Rth j-c): 0.83 °C/W
· Junction-to-Ambient Thermal Resistance (Rth j-a): 40 °C/W

## Electrical Characteristics (TC=25°C unless otherwise specified)

· Drain-Source Breakdown Voltage (V(BR)DSS): 600V (VGS=0, ID=0.25mA)
· Gate Threshold Voltage (VGS(th)): 2V to 4V (VDS=VGS, ID=0.25mA)
· Drain-Source On-Resistance (RDS(on)): 1.6Ω (VGS=10V, ID=3.7A)
· Gate-Body Leakage Current (IGSS): ±500 nA (VGS=±20V, VDS=0)
· Zero Gate Voltage Drain Current (IDSS): 250μA (VDS=600V, VGS=0) & 1000μA (VDS=480V, VGS=0, Tj=150°C)
· Forward On-Voltage (VSD): 1.5V (IS=6.2A, VGS=0)

## Website
· [www.iscsemi.cn](http://www.iscsemi.cn)