1. Overview:

️· Part Type: SO8 package gate driver.
️· Function: Designed to drive IGBTs and MOSFETs in various applications, including automotive, industrial, and consumer electronics.
️· Key Features:
- High-side/low-side driving capability
- Bootstrap capability for high-side gate driving
- Fault protection features (undervoltage lockout, overcurrent protection)
- Fast switching speeds
- Automotive-qualified (per AEC-Q100)

2. Electrical Characteristics (Key Values):

️· Supply Voltage (Vdd): Typically 4.5V - 28V
️· Gate Drive Voltage (Vout): Can output up to +/- 20V
️· Output Current: Iout+ = 1.5A, Iout- = 1.0A (This is important for driving larger MOSFETs/IGBTs)
️· Dead-Time Control: Adjustable dead-time to optimize switching performance.
️· Input Logic Levels: Compatible with standard logic levels.

3. Protection Features:

️· Undervoltage Lockout (UVLO): Prevents operation when the supply voltage is too low, protecting the driven device.
️· Overcurrent Protection: Limits current flow to protect the gate driver and the driven device.

4. Automotive Qualification:

️· AEC-Q100 Compliant: Meets automotive reliability standards.
️· ESD Protection: Class M2 (Machine Model), Class H2 (Human Body Model), Class C4 (Charged Device Model)
️· Temperature Range: -40°C to +125°C

5. Packaging & Marking:

️· Package: SO8
️· Marking: Includes part number and date code.
️· RoHS Compliant: Meets environmental regulations.

6. Important Notes/Cautions:

️· Application Restrictions: Not intended for direct use in life-sustaining applications or in automotive applications without designated “AU” part numbers.
️· Revision History: Datasheet has been updated several times, referencing significant changes. Always refer to the latest revision.