# Silicon NPN Power Transistors 2SC4052

## Description

· Switching power transistor
· ITO-220 package

## Pinning

· 1: Base
· 2: Collector
· 3: Emitter

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	Open emitter	600	V
VCEO	Collector-emitter voltage	Open base	450	V
VEBO	Emitter-base voltage	Open collector	7	V
IC	Collector current		3	A
ICM	Collector current-Peak		6	A
IB	Base current		1	A
IBM	Base current-Peak		2	A
PT	Total power dissipation	TC=25℃	25	W
Tj	Junction temperature		150	℃
Tstg	Storage temperature		-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-C	Thermal resistance junction to case	5.0	℃/W

## Characteristics (Tj=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
VCEO(SUS)	Collector-emitter sustaining voltage	IC=0.1A ;IB=0	450			V
VCEsat	Collector-emitter saturation voltage	IC=1.5A; IB=0.3A			1.0	V
VBEsat	Emitter-base saturation voltage	IC=1.5A; IB=0.3A			1.5	V
ICBO	Collector cut-off current	At rated volatge			0.1	mA
IEBO	Emitter cut-off current	At rated volatge			0.1	mA
hFE-1	DC current gain	IC=1.5A ; VCE=5V	10
hFE-2	DC current gain	IC=1mA ; VCE=5V	5
fT	Transition frequency	IC=0.3A ; VCE=10V		20		MHz
ton	Turn-on time	IC=1.5A;IB1=0.3A,IB2=0.6A,RL=100Ω,VBB2=4V			0.5	μs
ts	Storage time			2.0	μs
tf	Fall time			0.2	μs

## Package Outline

· ITO-220