# 2SA1887 Silicon PNP Power Transistor

## Description
· TO-220F package
· Low collector saturation voltage

## Applications
· High current switching applications

## Pinning

Pin	Description
1	Base
2	Collector
3	Emitter

## Absolute Maximum Ratings (Ta=25°C)

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	Open emitter	-80	V
VCEO	Collector-emitter voltage	Open base	-50	V
VEBO	Emitter-base voltage	Open collector	-7	V
IC	Collector current		-10	A
PC	Collector dissipation	TC=25℃	25	W
PC	Collector dissipation	Ta=25℃	2.0	W
Tj	Junction temperature		150	°C
Tstg	Storage temperature		-55~150	°C

## Characteristics (Tj=25°C unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-emitter breakdown voltage	IC=-10mA ; IB=0	-50			V
VCEsat	Collector-emitter saturation voltage	IC=-5A ;IB=-0.25A		-0.2	-0.4	V
VBEsat	Base-emitter saturation voltage	IC=-5A ;IB=-0.25A		-0.95	-1.4	V
ICBO	Collector cut-off current	VCB=-70V; IE=0			-1.0	μA
IEBO	Emitter cut-off current	VEB=-7V; IC=0			-1.0	μA
hFE	DC current gain	IC=-1A ; VCE=-1V	120		400
COB	Output capacitance	IE=0; VCB=-10V;f=1MHz		215		pF
fT	Transition frequency	IC=-1A ; VCE=-1V		45		MHz

## Package Outline
· Refer to Fig.2 for outline dimensions.