1. Transistors Covered:

️· 2N5664
️· 2N5665
️· 2N5666
️· 2N5667
️· 2N5666S (likely a variant with different specifications)
️· 2N5667S (likely a variant with different specifications)

2. Contact Information & Address:
*200577-Rev.A – 6/89*
*200577*
*NJ Semi-Conductors*
*956 Bell Road - Fairview, NJ 07022 – U.S.A.*
*Phone: (201) 568-8803*

3. Packaging Options:

️· TO-66 (for some parts)
️· TO-5 (for some parts)
️· TO-39 (for some parts)

4. Maximum Ratings (Highlights):

️· VCEO (Collector-Emitter Voltage): 200V (for 2N5664, 2N5666, 2N5666S) , 250V (for 2N5665, 2N5667)
️· VCBO (Collector-Base Voltage): 300V
️· VEBO (Emitter-Base Voltage): 400V
️· IB (Base Current): 6.0A
️· IC (Collector Current): 1.0A to 1.2A (depending on the specific part)
️· PT (Total Power Dissipation): 2.5W to 1.5W (depending on the part and mounting method (ta or Tc))
️· Junction Temperature: Up to 100°C (with derating)
️· Storage Temperature: -65°C to +100°C

5. Electrical Characteristics (Key Values):

️· OFF Characteristics: Values provided for Collector-Emitter Breakdown Voltage, Emitter-Base Breakdown Voltage, and Collector-Emitter Cutoff Current.
️· ON Characteristics: Details on Forward Current Transfer Ratio (hFE - often around 40-250), Collector-Emitter Saturation Voltage, and Base-Emitter Saturation Voltage.
️· Dynamic Characteristics: Data on the Forward Current Transfer Ratio at a specific frequency (f=10 MHz) and the Output Capacitance.

6. Safe Operating Area:

️· Specifies voltage and current limits for safe operation, based on junction temperature. This includes test conditions for DC tests.



Important Notes:

️· This is a partial summary. A full understanding requires a complete review of the entire datasheet.
️· The specific values for electrical characteristics (e.g., hFE) vary depending on the particular transistor model (2N5664, 2N5665, etc.).
️· The datasheet likely includes graphs, application circuits, and more detailed technical information that isn't captured here.