# Silicon NPN Power Transistors 2SC4236

## DESCRIPTION
· Switching power transistor
· TO-247 package
· High breakdown voltage

## PINNING
· 1: Base
· 2: Collector (connected to mounting base)
· 3: Emitter

## ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
· VCBO (Collector-base voltage): 1200 V
· VCEO (Collector-emitter voltage): 800 V
· VEBO (Emitter-base voltage): 7 V
· IC (Collector current DC): 6 A
· ICM (Collector current Peak): 12 A
· IB (Base current): 3 A
· IBM (Base current Peak): 6 A
· PD (Total power dissipation): 100 W @ TC=25°C
· Tj (Junction temperature): 150°C
· Tstg (Storage temperature): -55 to 150°C

## THERMAL CHARACTERISTICS
· Rth j-C (Thermal resistance junction to case): 1.25 °C/W

## CHARACTERISTICS (Tj=25°C)
· VCEO(SUS) (Collector-emitter sustaining voltage): 800 V @ IC=0.2A, IB=0
· VCEsat (Collector-emitter saturation voltage): 1.0 V @ IC=3A, IB=0.6A
· VBEsat (Base-emitter saturation voltage): 1.5 V @ IC=3A, IB=0.6A
· ICBO (Collector cut-off current): 0.1 mA @ rated voltage
· IEBO (Emitter cut-off current): 0.1 mA @ rated voltage
· hFE-1 (DC current gain): 8 @ IC=3A, VCE=5V
· hFE-2 (DC current gain): 7 @ IC=1mA, VCE=5V
· fT (Transition frequency): 8 MHz @ IC=0.6A, VCE=10V

## SWITCHING TIMES (Resistive Load)
· ton (Turn-on time): 0.5 µs
· ts (Storage time): 3.5 µs
· tf (Fall time): 0.3 µs @ IC=3A, IB1=0.6A, IB2=1.2A, VBB2=4V, RL=85Ω

## PACKAGE OUTLINE
· Fig.2 shows outline dimensions.