TIP29 / Boca Semiconductor Corporation - датащи(PDF) Chat AI

TIP29 Datasheet with Chat AI

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Part No.	TIP29
Manufacturer	BOCA
Size	26 Kbytes
Pages	2 pages
Description	General purpose Amplifier and Switching Applications

Datasheet Summary with AI

️· Breakdown Voltage (CEO(sus)): 40-100 V
️· Breakdown Voltage (CBO): 40-100 V
️· Base-Emitter On Voltage (V BE(on)): Max 1.3 V
️· Small-Signal Current Gain (h fe): Min 20
️· Transition Frequency (f T): Min 3 MHz

## Thermal Characteristics
️· Thermal Resistance (Junction to Ambient) (R th j–a): 62.5 °C/W
️· Thermal Resistance (Junction to Case) (R th j–c): 4.167 °C/W

## Package
️· TO-92 package (Dimensions not specified)

# TIP29/TIP30 Series NPN/PNP Plastic Power Transistors

## General Description
️· General-purpose amplifier and switching applications
️· TIP29, TIP29A, TIP29B, TIP29C (NPN)
️· TIP30, TIP30A, TIP30B, TIP30C (PNP)

## Absolute Maximum Ratings
️· Collector-Base Voltage (V CBO): 40-100 V
️· Collector-Emitter Voltage (V CEO): 40-100 V
️· Collector Current (I C): 1.0 A
️· Total Power Dissipation (P tot): 30 W (at TC = 25°C)
️· Junction Temperature (T j): 150 °C
️· Collector-Emitter Saturation Voltage (V CEsat): 0.7 V (at IC = 1 A, IB = 125 mA)
️· DC Current Gain (h FE): 15-75

## Electrical Characteristics
️· Emitter-Base Voltage (V EBO): Max 5.0 V
️· Collector Current (Peak) (I CM): 3.0 A
️· Base Current (I B): Max 0.4 A
️· Breakdown Voltage (CEO(sus)): 40-100 V
️· Breakdown Voltage (CBO): 40-100 V
️· Base-Emitter On Voltage (V BE(on)): Max 1.3 V
️· Small-Signal Current Gain (h fe): Min 20
️· Transition Frequency (f T): Min 3 MHz

## Thermal Characteristics
️· Thermal Resistance (Junction to Ambient) (R th j–a): 62.5 °C/W
️· Thermal Resistance (Junction to Case) (R th j–c): 4.167 °C/W

## Package
️· TO-92 package (Dimensions not specified)