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93LC46-I/P Datasheet with Chat AI
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  • Part No.93LC46-I/P
    ManufacturerMICROCHIP
    Size321 Kbytes
    Pages20 pages
    Description1K/2K/4K 2.5V Microwire Serial EEPROM
    Datasheet Summary with AI

    1. Organization and Addressing:

    ️· Organization: Available in both (x16) and (x8) organizations.
    - (x16) = 16 bits per memory location
    - (x8) = 8 bits per memory location
    ️· ORG Pin: Determines the organization:
    - Connected to VCC: (x16) organization
    - Connected to Ground: (x8) organization
    ️· Memory Size: (This isn't explicitly stated, but you would need to refer to the full datasheet for the specific memory sizes available.)

    2. Operation & Commands:

    ️· Start Condition: Detected when CS and DI are high simultaneously on a rising edge of CLK.
    ️· EWDS (Erase/Write Disable):
    - Default power-up state.
    - All programming modes are disabled.
    - Allows normal read operation.
    ️· EWEN (Erase/Write Enable):
    - Must be executed before ERASE or WRITE operations.
    ️· ERAL (Erase All):
    - Erases the entire memory array to all logical '1's.
    - Takes 8ms typical
    - Command is ensured at 5V ±10%
    ️· ERASE:
    - Erases a single memory location to all logical '1's.
    - Takes 4ms per word typical.
    ️· WRITE:
    - Writes data to a single memory location.
    - Takes 4ms per word typical.
    ️· WRAL (Write All):
    - Writes data to the entire memory array
    - Includes an automatic ERAL
    - Requires the chip to be in the EWEN status.
    - Takes 16ms typical.
    ️· Ready/Busy Indicator: The DO pin indicates the status during programming:
    - DO Low = Programming in progress
    - DO High = Programming complete and device ready

    3. Timing & Electrical Characteristics (Important Notes):

    ️· VCC Levels: Programming operations (ERASE, WRITE, ERASE ALL, WRITE ALL) require VCC above 1.4V.
    ️· CS Timing: CS must be low before the last bit of data during a programming cycle to initiate it.
    ️· "Dummy Zero": A dummy zero bit precedes read operations.
    ️· Data Protection: Data protection circuitry inhibits programming when VCC falls below 1.4V.
    ️· Read Timing: Stable data output (T PD) is specified in the full datasheet.

    4. Important Considerations:

    ️· Refer to Full Datasheet: This is just an excerpt. For complete specifications (memory sizes, pin configurations, electrical characteristics, timing diagrams), refer to the full datasheet.
    ️· Bus Conflicts: Be cautious about connecting DI and DO together, as bus conflicts can occur during the "dummy zero" state.

    1. Organization and Addressing:

    ️· Organization: Available in both (x16) and (x8) organizations.
    - (x16) = 16 bits per memory location
    - (x8) = 8 bits per memory location
    ️· ORG Pin: Determines the organization:
    - Connected to VCC: (x16) organization
    - Connected to Ground: (x8) organization
    ️· Memory Size: (This isn't explicitly stated, but you would need to refer to the full datasheet for the specific memory sizes available.)

    2. Operation & Commands:

    ️· Start Condition: Detected when CS and DI are high simultaneously on a rising edge of CLK.
    ️· EWDS (Erase/Write Disable):
    - Default power-up state.
    - All programming modes are disabled.
    - Allows normal read operation.
    ️· EWEN (Erase/Write Enable):
    - Must be executed before ERASE or WRITE operations.
    ️· ERAL (Erase All):
    - Erases the entire memory array to all logical '1's.
    - Takes 8ms typical
    - Command is ensured at 5V ±10%
    ️· ERASE:
    - Erases a single memory location to all logical '1's.
    - Takes 4ms per word typical.
    ️· WRITE:
    - Writes data to a single memory location.
    - Takes 4ms per word typical.
    ️· WRAL (Write All):
    - Writes data to the entire memory array
    - Includes an automatic ERAL
    - Requires the chip to be in the EWEN status.
    - Takes 16ms typical.
    ️· Ready/Busy Indicator: The DO pin indicates the status during programming:
    - DO Low = Programming in progress
    - DO High = Programming complete and device ready

    3. Timing & Electrical Characteristics (Important Notes):

    ️· VCC Levels: Programming operations (ERASE, WRITE, ERASE ALL, WRITE ALL) require VCC above 1.4V.
    ️· CS Timing: CS must be low before the last bit of data during a programming cycle to initiate it.
    ️· "Dummy Zero": A dummy zero bit precedes read operations.
    ️· Data Protection: Data protection circuitry inhibits programming when VCC falls below 1.4V.
    ️· Read Timing: Stable data output (T PD) is specified in the full datasheet.

    4. Important Considerations:

    ️· Refer to Full Datasheet: This is just an excerpt. For complete specifications (memory sizes, pin configurations, electrical characteristics, timing diagrams), refer to the full datasheet.
    ️· Bus Conflicts: Be cautious about connecting DI and DO together, as bus conflicts can occur during the "dummy zero" state.

    Part No.93LC46-I/P
    ManufacturerMICROCHIP
    Size321 Kbytes
    Pages20 pages
    Description1K/2K/4K 2.5V Microwire Serial EEPROM
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