# Naina Semiconductor MBR7520-MBR7540R Schottky Power Diodes

## Features

· Fast switching
· Low forward voltage drop
· High surge capability
· High efficiency, low power loss
· Normal and Reverse polarity
· Available models: MBR7520(R), MBR7530(R), MBR7535(R), MBR7540(R)

## Maximum Ratings

Parameter	MBR7520(R)	MBR7530(R)	MBR7535(R)	MBR7540(R)	Units
Repetitive peak reverse voltage (VRRM)	20	30	35	40	V
RMS reverse voltage (VRMS)	14	21	25	28	V
DC blocking voltage (VDC)	20	30	35	40	V
Continuous forward current (IF) @ TC ≤ 100oC	75	75	75	75	A
Surge non-repetitive forward current (IFSM) @ TC = 25oC	1000	1000	1000	1000	A
Forward voltage (VF) @ IF = 75A, TJ = 25oC	0.65	0.65	0.65	0.65	V
Reverse current (IR) @ VR = 20V, TJ = 25oC	5	5	5	5	mA
Reverse current @ VR = 20V, TJ = 125oC	150	150	150	150	mA

## Thermal & Mechanical Specifications

Parameter	MBR7520(R)	MBR7530(R)	MBR7535(R)	MBR7540(R)	Units
Maximum thermal resistance, junction to case (Rth(JC))	1.0	1.0	1.0	1.0	oC/W
Operating junction temperature range (TJ)	-65 to 150	-65 to 150	-65 to 150	-65 to 150	oC
Storage temperature (Tstg)	-65 to 175	-65 to 175	-65 to 175	-65 to 175	oC
Mounting torque (non-lubricated threads) (F)	4.0	4.0	4.0	4.0	Nm
Approximate allowable weight (W)	17.0	17.0	17.0	17.0	g

## Package

· DO-203AB (DO-5)
· All dimensions in millimeters.