SSG4842N / SeCoS Halbleitertechnologie GmbH

SSG4842N Datasheet with Chat AI

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Part No.	SSG4842N
Manufacturer	SECOS
Size	121 Kbytes
Pages	2 pages
Description	23A , 40V , RDS(ON) 9 m N-Ch Enhancement Mode Power MOSFET

Datasheet Summary with AI

1. Product Identification & Manufacturer

️· Product Name: SSG4842N
️· Description: 23A, 40V, Rds(on) 9mΩ N-Channel Enhancement Mode Power MOSFET
️· Manufacturer/Website: SeCoS GmbH ([http://www.SeCoSGmbH.com/](http://www.SeCoSGmbH.com/))

2. Important Notices/Disclaimers

️· Any changes to the specifications are not individually communicated. (Implies you need to check the website for the latest version)

3. Electrical Characteristics (Static)

Parameter Symbol Min Typ Max Unit Test Conditions

Gate Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250µA

Gate-Body Leakage IGSS - - 100 nA VDS=0, VGS=20V

Zero Gate Voltage Drain Current IDSS - - 1 µA VDS=24V, VGS=0

Zero Gate Voltage Drain Current IDSS - - 5 µA VDS=24V, VGS=0, TJ=55°C

On-State Drain Current ID(on) 30 - - A VDS=5V, VGS=10V

Drain-Source On-Resistance RDS(ON) - - 9 mΩ VGS=10V, ID=23A

Drain-Source On-Resistance RDS(ON) - - 12 mΩ VGS=4.5V, ID=20A

Forward Transconductance gfs - 90 - S VDS=15V, ID=23A

Diode Forward Voltage VSD - 0.7 - V IS=2.3A, VGS=0

4. Electrical Characteristics (Dynamic)

Parameter Symbol Min Typ Max Unit Test Conditions

Total Gate Charge Qg - 25 - nC ID=23A, VDS=15V, VGS=4.5V

Gate-Source Charge Qgs - 6 - -

Gate-Drain Charge Qgd - 9 - -

Turn-On Delay Time Td(on) - 20 - nS VDD=15V, ID=1A, VGEN=10V, RL=6Ω

Rise Time Tr - 13 - -

Turn-Off Delay Time Td(off) - 82 - -

Fall Time Tf - 43 - -

5. Notes/Test Conditions

️· Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%. (Indicates dynamic parameters are measured with short pulses)
️· Guaranteed by Design: Some parameters are guaranteed by the design process and are not necessarily subject to 100% production testing.

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Gate Threshold Voltage	VGS(th)	1	-	-	V	VDS=VGS, ID=250µA
Gate-Body Leakage	IGSS	-	-	100	nA	VDS=0, VGS=20V
Zero Gate Voltage Drain Current	IDSS	-	-	1	µA	VDS=24V, VGS=0
Zero Gate Voltage Drain Current	IDSS	-	-	5	µA	VDS=24V, VGS=0, TJ=55°C
On-State Drain Current	ID(on)	30	-	-	A	VDS=5V, VGS=10V
Drain-Source On-Resistance	RDS(ON)	-	-	9	mΩ	VGS=10V, ID=23A
Drain-Source On-Resistance	RDS(ON)	-	-	12	mΩ	VGS=4.5V, ID=20A
Forward Transconductance	gfs	-	90	-	S	VDS=15V, ID=23A
Diode Forward Voltage	VSD	-	0.7	-	V	IS=2.3A, VGS=0

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Total Gate Charge	Qg	-	25	-	nC	ID=23A, VDS=15V, VGS=4.5V
Gate-Source Charge	Qgs	-	6	-	-
Gate-Drain Charge	Qgd	-	9	-	-
Turn-On Delay Time	Td(on)	-	20	-	nS	VDD=15V, ID=1A, VGEN=10V, RL=6Ω
Rise Time	Tr	-	13	-	-
Turn-Off Delay Time	Td(off)	-	82	-	-
Fall Time	Tf	-	43	-	-